PROCESS

CPD91

Switching Diode

Low Leakage Switching Diode Chip

PRINCIPAL DEVICE TYPES

CMPD6001 Series
CMOD6001
CMLD6001
CMLD6001DO
CMDD6001

Process

EPITAXIAL PLANAR

Die Size

11 x 11 MILS

Die Thickness

9.1 MILS

Anode Bonding pad Area

3.4 x 3.4 MILS

Top Side Metalization

Al - 15,000�

Back Side Metalization

Au - 18,000�

PROCESS DETAILS

145 Adams Avenue
Hauppauge, NY 11788 USA
Tel:

(631) 435-1110

Fax: (631) 435-1824
www.centralsemi.com

GEOMETRY

R0 (20- January 2006)

GROSS DIE PER 4 INCH WAFER

94,130

Central

Semiconductor Corp.