CQ89-2M
CQ89-2N
2.0 AMP TRIAC
600 THRU 800 VOLTS
SOT-89 CASE
Central
Semiconductor Corp.
TM
R0 (10-May 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ89-2M
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
CQ89
CQ89
-2M
-2N
UNITS
Peak Repetitive Off-State Voltage
VDRM
600
800
V
RMS On-State Current (TC=50C)
IT(RMS)
2.0
A
Peak One Cycle Surge (t=10ms)
ITSM
20
A
I
2
t Value for Fusing (t=10ms)
I
2
t
2.0
A
2
s
Peak Gate Power (tp=10s)
PGM
3.0
W
Average Gate Power Dissipation
PG(AV)
0.2
W
Peak Gate Current (tp=10s)
IGM
1.2
A
Peak Gate Voltage (tp=10s)
VGM
8.0
V
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +125
C
Thermal Resistance
JA
180
C/W
Thermal Resistance
JC
90
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
Rated VDRM, RGK=1K
5.0
A
IDRM
Rated VDRM, RGK=1K, TC=125C
200
A
IGT
VD=12V, QUAD I, II, III
1.35
5.00
mA
IGT
VD=12V, QUAD IV
3.75
8.00
mA
IH
RGK=1K
1.2
5.0
mA
VGT
VD=12V, QUAD I, II, III, IV
1.1
1.8
V
VTM
ITM=2.0A, tp=380s
1.50
1.75
V
VTM
ITM=3.0A, tp=380s
1.7
2.0
V
dv/dt
VD=
2
/
3
VDRM, TC=125C
2.5
V/s
MIN
MAX
MIN
MAX
A
0.055 0.067
1.40
1.70
B
C
0.014 0.018
0.35
0.46
D
0.173 0.185
4.40
4.70
E
0.064 0.074
1.62
1.87
F
0.146 0.177
3.70
4.50
G
0.090 0.106
2.29
2.70
H
0.028 0.051
0.70
1.30
J
0.014 0.019
0.36
0.48
K
0.017 0.023
0.44
0.58
L
M
SOT-89 (REV: R4)
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
4 4
0.059
0.118
1.50
3.00
Central
Semiconductor Corp.
TM
SOT-89 CASE - MECHANICAL OUTLINE
CQ89-2M
CQ89-2N
2.0 AMP TRIAC
600 THRU 800 VOLTS
R0 (10-May 2004)
LEAD CODE:
1) GATE
2) MT2
3) MT1
MARKING CODE:
FULL PART NUMBER
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