Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
252
CQ89D
CQ89M
CQ89N
2.0 AMP TRIAC
400 THRU 800 VOLTS
SOT-89 CASE
MAXIMUM RATINGS (TC=25
o
C)
SYMBOL CQ89D CQ89M CQ89N UNITS
Peak Repetitive Off-State Voltage VDRM
400
600
800
V
RMS On-State Current (TC=80
o
C) IT(RMS)
2.0
A
Peak One Cycle Surge (10ms) ITSM
10
A
Peak Gate Current
IGM
1.0
A
Average Gate Power Dissipation PG(AV)
0.1
W
StorageTemperature
Tstg
-45 to +150
o
C
Junction Temperature
TJ
-45 to +125
o
C
Thermal Resistance
J-C
10
o
C/W
ELECTRICAL CHARACTERISTICS (TC=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
VD=Rated VDRM
5.00
A
IDRM
VD=Rated VDRM, TC=125
o
C
200
A
IGT
VD=12V, QUAD I, II, III, IV
25
mA
IH
VD=12V
25
mA
VGT
VD=12V
2.00
V
VTM
IT=3.0A
1.75
V
dv/dt
VD=
2
3
VDRM, TC=125
o
C
100
V/
s
SOT-89
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ89D
series types are epoxy molded silicon triacs
designed for full wave AC control applications
featuring gate triggering in all four (4)
quadrants.
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