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Электронный компонент: CQ89NS

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Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
254
CQ89DS
CQ89MS
CQ89NS
2.0 AMP TRIAC
400 THRU 800 VOLTS
SOT-89 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CQ89DS series types are epoxy molded
silicon triacs designed for full wave AC
control applications featuring gate
triggering in all four (4) quadrants.
MAXIMUM RATINGS (TC=25
o
C)
SYMBOL
CQ89DS CQ89MS CQ89NS UNITS
Peak Repetitive Off-State Voltage VDRM
400
600
800
V
RMS On-State Current (TC=80
o
C) IT(RMS)
2.0
A
Peak One Cycle Surge (10ms) ITSM
10
A
Peak Gate Current
IGM
1.0
A
Average Gate Power Dissipation PG(AV)
0.1
W
StorageTemperature
Tstg
-45 to +150
o
C
Junction Temperature
TJ
-45 to +125
o
C
Thermal Resistance
J-C
10
o
C/W
ELECTRICAL CHARACTERISTICS (TC=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
VD=Rated VDRM
5.0
A
IDRM
VD=Rated VDRM, TC=125
o
C
200
A
IGT
VD=12V, QUAD I, II, III, IV
5.0
mA
IH
VD=12V
5.0
mA
VGT
VD=12V
2.0
V
VTM
IT=3.0A
1.75
V
dv/dt
VD=
2
3
VDRM, TC=125
o
C
30
V/
s
SOT-89
NEW
255
R2
All dimensions in inches (mm).
LEAD CODE:
1) GATE
2) MT2
3) MT1
R1