CQ92B
CQ92D
CQ92M
CQ92N
TRIAC
1.0 AMP, 200 THRU 800 VOLTS
TO-92 CASE
Central
Semiconductor Corp.
TM
R1 (03-June 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQ92B
Series are epoxy molded silicon Triacs designed
for full wave AC control applications featuring
gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
CQ92B
CQ92D
CQ92M
CQ92N
UNITS
Peak Repetitive Off-State Voltage
VDRM
200
400
600
800
V
RMS On-State Current (TC=50C)
IT(RMS)
1.0
A
Peak One Cycle Surge (t=10ms)
ITSM
20
A
I
2
t Value for Fusing (t=10ms)
I
2
t
2.0
A
2
s
Peak Gate Power (tp=10s)
PGM
3.0
W
Average Gate Power Dissipation
PG (AV)
0.2
W
Peak Gate Current (tp=10s)
IGM
1.2
A
Peak Gate Voltage (tp=10s)
VGM
8.0
V
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +125
C
Thermal Resistance
JA
180
C/W
Thermal Resistance
JC
90
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IDRM
Rated VDRM, RGK=1K
5.0
A
IDRM
Rated VDRM, RGK=1K, TC=125C
200
A
IGT
VD=12V, QUAD I, II, III, IV
5.0
mA
IH
IT=100mA, RGK=1K
5.0
mA
VGT
VD=12V, QUAD I, II, III, IV
2.0
V
VTM
ITM=1.2A, tp=380s
1.26
V
dv/dt
VD=
2
/
3
VDRM, TC=125C
30
V/s
MIN
MAX
MIN
MAX
A (DIA)
0.175
0.205
4.45
5.21
B
0.170
0.210
4.32
5.33
C
0.500
-
12.70
-
D
0.016
0.022
0.41
0.56
E
F
G
0.125
0.165
3.18
4.19
H
0.080
0.105
2.03
2.67
I
TO-92 (REV: R1)
0.015
0.38
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
0.100
2.54
0.050
1.27
Central
Semiconductor Corp.
TM
TO-92 CASE - MECHANICAL OUTLINE
CQ92B
CQ92D
CQ92M
CQ92N
TRIAC
1.0 AMP, 200 THRU 800 VOLTS
R1 (03-June 2004)
LEAD CODE:
1) MT1
2) GATE
3) MT2
MARKING CODE:
FULL PART NUMBER
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