CQD-4M
CQD-4N
4.0 AMP TRIAC
600 THRU 800 VOLTS
DPAK THYRISTOR CASE
Central
Semiconductor Corp.
TM
R0 (20-May 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CQD-4M
series type is an Epoxy Molded Silicon Triac
designed for full wave AC control applications
featuring gate triggering in all four (4) quadrants.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
CQD
CQD
-4M
-4N
UNITS
Peak Repetitive Off-State Voltage
VDRM
600
800
V
RMS On-State Current (TC=80C)
IT(RMS)
4.0
A
Peak One Cycle Surge (t=10ms)
ITSM
40
A
I
2
t Value for Fusing (t=10ms)
I
2
t
2.4
A
2
s
Peak Gate Power (tp=10s)
PGM
3.0
W
Average Gate Power Dissipation
PG(AV)
0.2
W
Peak Gate Current (tp=10s)
IGM
1.2
A
Storage Temperature
Tstg
-40 to +150
C
Junction Temperature
TJ
-40 to +125
C
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IDRM
Rated VDRM, RGK=1K
10
A
IDRM
Rated VDRM, RGK=1K, TC=125C
200
A
IGT
VD=12V, QUAD I, II, III
2.5
5.0
mA
IGT
VD=12V, QUAD IV
5.4
9.0
mA
IH
RGK=1K
1.6
5.0
mA
VGT
VD=12V, QUAD I, II, III, IV
0.95
1.75
V
VTM
ITM=6.0A, tp=380s
1.25
1.75
V
dv/dt
VD=
2
/
3
VDRM, TC=125C
11
V/s
MIN
MAX
MIN
MAX
A
0.086
0.094
2.18
2.39
B
0.018
0.032
0.46
0.81
C
0.035
0.050
0.89
1.27
D
0.205
0.228
5.21
5.79
E
0.047
0.055
1.20
1.40
F
0.018
0.024
0.45
0.60
G
0.250
0.268
6.35
6.81
H
0.205
0.215
5.20
5.46
J
0.235
0.245
5.97
6.22
K
0.100
0.108
2.55
2.74
L
0.025
0.040
0.64
1.02
M
0.025
0.035
0.64
0.89
N
DPAK THYRISTOR (REV: R0)
2.28
0.090
DIMENSIONS
SYMBOL
INCHES
MILLIMETERS
Central
Semiconductor Corp.
TM
DPAK THYRISTOR CASE - MECHANICAL OUTLINE
CQD-4M
CQD-4N
4.0 AMP TRIAC
600 THRU 800 VOLTS
R0 (20-May 2004)
LEAD CODE:
1) MT1
2) MT2
3) GATE
4) MT2
MARKING CODE:
FULL PART NUMBER
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