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Электронный компонент: CZT3906PNP

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MAXIMUM RATINGS: (TA=25C)
SYMBOL
CZT3904
CZT3906
UNITS
Collector-Base Voltage
VCBO
60
40
V
Collector-Emitter Voltage
VCEO
40
40
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Collector Current
IC
200
mA
Power Dissipation
PD
2.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
62.5
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
CZT3904
CZT3906
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
50
50
nA
BVCBO
IC=10A
60
40
V
BVCEO
IC=1.0mA
40
40
V
BVEBO
IE=10A
6.0
5.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.20
0.25
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.30
0.40
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.85
0.65
0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
0.95
0.95
V
hFE
VCE=1.0V, IC=0.1mA
40
60
hFE
VCE=1.0V, IC=1.0mA
70
80
hFE
VCE=1.0V, IC=10mA
100
300
100
300
hFE
VCE=1.0V, IC=50mA
60
60
hFE
VCE=1.0V, IC=100mA
30
30
fT
VCE=20V, IC=10mA, f=100MHz
300
250
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
4.5
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
8.0
10
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
10
2.0
12
k
CZT3904 NPN
CZT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
SOT-223 CASE
Central
Semiconductor Corp.
TM
R3 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT3904,
CZT3906 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose and switching applications.
MARKING CODE: FULL PART NUMBER
Central
Semiconductor Corp.
TM
SOT-223 CASE - MECHANICAL OUTLINE
CZT3904 NPN
CZT3906 PNP
COMPLEMENTARY
SILICON TRANSISTORS
R3 (26-September 2002)
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
CZT3904
CZT3906
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN MAX
UNITS
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.5
8.0
0.1
10
x10
-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
100
400
100
400
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
40
3.0
60
mhos
NF
VCE=5.0V, IC=100A, RS=1.0k
f=10Hz to 15.7kHz
5.0
4.0
dB
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
35
ns
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
35
ns
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
200
225
ns
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
50
75
ns