-30
Single P-Channel Enhancement Mode MOSFET
FEATURES
-30V , -4.9A , R
DS(ON)
=70m
@V
GS
=-10V
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220 package for through hole.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
4.9
30
V
Drain Gurrent-Continuous @T
J
=125 C
-Pulsed
I
D
A
I
DM
A
Drain-Source Diode Forward Current
I
S
-1.7
A
Maximum Power Dissipation
P
D
W
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
62.5
/W
C
R
DS(ON)
=120m
@V
GS
=-4.5V
50
S
G
D
4-12
4
CEP05P03/CEB05P03
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
G
S
S
D
D
G
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=-250
A
-30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=-30V, V
GS
=0V
-1
A
Gate-Body Leakage
I
GSS
V
GS
= 20V, V
DS
=0V
100 nA
ON CHARACTERISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
= -250
A
-1
-1.5
-3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=-10V, I
D
=-4.9A
42
70
m
V
GS
=-4.5V, I
D
=-2.0A
78
120
m
On-State Drain Current
I
D(ON)
V
DS
=-5V, V
GS
=-10V
-20
A
5
S
Forward Transconductance
FS
g
V
DS
=-15V, I
D
=-4.9A
DYNAMIC CHARACTERISTICS
b
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -15V, V
GS
= 0V
f =1.0MH
Z
1040
P
F
420
P
F
P
F
150
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall time
V
DD
= -15V,
I
D
= -1A,
V
GEN
= -10V,
R
GEN
= 6
8
15
ns
ns
ns
ns
11
20
23
40
14
25
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= -15V, I
D
= -4.9A,
V
GS
= -10V
22.5
29
nC
nC
nC
2
6
4-13
4
CEP05P03/CEB05P03
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = -1.7A
-0.79 -1.2
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
-V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
I
D
,
D
r
a
in
Current(A)
C
,
Capacitance
(pF)
R
DS
(ON)
,
O
n-Resistance
(Ohms)
I
D
,
D
r
a
in
Current
(A)
-20
-16
-12
-8
-4
0
0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-10V
-9V
-5V
-4V
-3V
V
GS
=-6V
0.18
0.15
0.12
0.09
0.06
0.03
0.00
0
-2.5
-5
-7.5
-10
Tj=125 C
V
GS
=-10V
25 C
-55 C
-20
-16
-12
-8
-4
0
0
-1
-1.5
-2.0
-2.5
-3.0
-3.5
-55 C
25 C
Tj=125 C
4-14
4
0
5
10
15
20
25
30
Ciss
Coss
Crss
1500
1250
1000
750
500
250
0
CEP05P03/CEB05P03
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth,
Normalized
Gate-Source
Threshold
Voltage
g
FS
,
Transconductance
(S)
V
GS
,
Gate
t
o
Source
Voltage
(V)
BV
DSS
,
Normalized
Drain-Source
Breakdown
Voltage
-Is,
Source-drain
c
urrent
(A)
Figure 7. Transconductance Variation
with Drain Current
-I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
-V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
-V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
-I
D
,
D
rain
Current
(
A)
4-15
4
-50
-25
0
25
50
75 100 125 150
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
DS
=V
GS
I
D
=-250 A
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=-250 A
10
8
6
4
2
0
0
5
10
15
20
V
DS
=-15V
20.0
10.0
1.0
0.4
0.5
1.0
1.5
2.0
2.5
V
GS
=0V
70
10
1
1
10
30
60
V
GS
=-10V
Single Pulse
Tc=25 C
R
DS
(ON)Lim
it
DC
10m
s
1m
s
100
s
8
10
6
4
2
0
0
3
6
9
12
15
18
21
24
V
DS
=-15V
I
D
=-4.9A
CEP05P03/CEB05P03
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
INVERTED
PULSE WIDTH
4-16
4
-V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
Transient
Thermal
Impedance
2
1
0.1
0.01
0.01
0.1
1
10
100
1000
10000
P
DM
t
1
t
2
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
1. R
JC
(t)=r (t) * R
JC
2. R
JC
=See Datasheet
3. T
JM-
T
C
= P* R
JC
(t)
4. Duty Cycle, D=t1/t2
r(t),Normalized
Effective
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
CEP05P03/CEB05P03
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