N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
THERMAL CHARACTERISTICS
CEP703ALS2/CEB703ALS2
G
S
S
D
D
G
15
G
D
S
15-12
CEP703ALS2/CEB703ALS2
ELECTRICAL CHARACTERISTICS (T
C
25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
ON CHARACTERISTICS
a
DYNAMIC CHARACTERISTICS
b
SWITCHING CHARACTERISTICS
b
15-13
15
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current(A)
C
,
Capacitance
(
pF)
Dr
ain-Source
,
O
n-Resistance
I
D
,
D
r
a
in
Current
(A)
I
D
,
D
r
a
in
Current
(A)
15-14
15
R
DS(ON)
,
N
or
maliz
ed
CEP703ALS2/CEB703ALS2
Parameter
Symbol
Condition
Min Typ Max Unit
BODY DIODE & SCHOTTKY DIODE RATINGS AND CHARACTERISTICS
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
V
GS
= 0V, Is =25A
1.3
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
Body Diode Forward Voltage
V
F
I
F
=2A, Tc=25 C
0.55
V
Schottky Forward Voltage
I
F(AV)
2
A
Average Forward Rectified Current
Ciss
Coss
Crss
3600
3000
2400
1800
1200
600
0
0
10
5
15
20
25
30
40
35
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=10,9,8,7,6,5V
V
GS
=4V
V
GS
=3V
-55 C
40
30
20
10
0
0
2
1
3
4
5
6
25 C
T
J
=125 C
25 C
-55 C
3.0
2.5
2.0
1.5
1.0
0.5
0
0
10
20
30
40
Tj=125 C
V
GS
=10V
CEP703ALS2/CEB703ALS2
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth,
Normalized
Gate-Source
Threshold
V
oltage
g
FS
,
T
ransconductance
(S)
V
GS
,
G
ate
t
o
S
ource
V
oltage
(V)
BV
DSS
,
N
ormalized
Drain-Source
Breakdown
Voltage
Is,
Source-drain
current
(A)
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
D
rain
Current
(A)
15-15
15
40
10
0.1
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25 0
25 50
75 100 125 150
V
DS
=V
GS
I
D
=250 A
-50 -25
0
25 50
75 100 125 150
1.06
1.04
1.02
1.00
0.98
0.96
0.94
ID=250 A
25
20
15
10
30
0
5
0
10
20
30
40
V
DS
=10V
10
0
2
4
6
8
0
4
8
12 16 20 24 28 32
V
DS
=10V
I
D
=25A
300
100
200
10
1
0.5
0.1
1
10
30 60
V
GS
=10V
Single Pulse
Tc=25 C
R
DS
(ON)
Limit
DC
10ms
1ms
10
0
s
10
s
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
Transient
Thermal
I
mpedance
0.01
0.01
0.1
1
10
100
1000
10000
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
r(t),Normalized
Effective
15-16
15
CEP703ALS2/CEB703AL2
INVERTED
2
1
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P
DM
t
1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P
DM
* R
JA
(t)
4. Duty Cycle, D=t1/t2
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
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