120
N-Channel Enhancement Mode Field Transistor
FEATURES
120V , 10A , R
DS(ON)
=120m
@V
GS
=
5
V
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-251 & TO-252 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous
-Pulsed
I
D
10
A
I
DM
40
A
Drain-Source Diode Forward Current
I
S
10
A
Maximum Power Dissipation
P
D
W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
3
50
/W
C
/W
C
@Tc=25 C
Derate above 25 C
50
0.3
W/ C
S
G
D
CEU SERIES
TO-252AA(D-PAK)
CED SERIES
TO-251(l-PAK)
G
G
S
S
D
D
6
CED1012L/CEU1012L
6-7
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=250
A
120
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=120V, V
GS
=0V
25
A
Gate-Body Leakage
I
GSS
V
GS
= 20V, V
DS
=0V
100 nA
ON CHARACTERISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=5V, I
D
=10A
120
m
On-State Drain Current
I
D(ON)
V
GS
=10V, V
DS
=10V
10
A
3
S
Forward Transconductance
FS
g
V
DS
=10V, I
D
= 5A
DYNAMIC CHARACTERISTICS
b
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
960
P
F
178
42
P
F
P
F
65
85
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall time
V
DD
=30V,
I
D
= 10A,
V
GS
= 5V,
R
GEN
= 9
50
ns
ns
ns
ns
130
80
90
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=96V, I
D
= 10A,
V
GS
= 5V
33
nC
nC
nC
6
27.5
5
16
100
1.6
6-8
9.5
45
60
CED1012L/CEU1012L
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 10A
1.2
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current(A)
C
,
Capacitance
(pF)
Dr
ain-Source
,
O
n-Resistance
I
D
,
D
r
a
in
Current
(A)
I
D
,
D
r
a
in
Current
(A)
6
25 C
-55 C
1.3
1.2
1.1
1.0
0.9
0.8
0
0
5
10
15
20
25
V
GS
=10V
Tj=125 C
R
DS(ON)
,
N
or
maliz
e
d
Ciss
Coss
Crss
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
6-9
0.86
CED1012L/CEU1012L
12
10
8
6
4
2
0
0
1
2
3
4
5
6
V
GS
=3V
V
GS
=10,9,8,7,6,5,4V
-55 C
25 C
125 C
20
15
10
5
0
4
5
6
7
8
9
CED1012L/CEU1012L
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth,
Normalized
Gate-Source
Threshold
Voltage
g
FS
,
Transconductance
(S)
V
GS
,
Gate
t
o
Source
Voltage
(V)
BV
DSS
,
Normalized
Drain-Source
Breakdown
Voltage
Is,
Source-drain
c
urrent
(A)
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
D
rain
Current
(A)
6-10
6
10
2
4
6
8
12
0
0
5
10
15
20
V
DS
=10V
20.0
10.0
0.1
1
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
=0V
90
10
0.5
1
1
10
120 300
V
GS
=10V
Single Pulse
Tc=25 C
R
DS
(ON)
Lim
it
DC
10ms
1ms
100
s
10
s
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
ID=250 A
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250 A
10
8
6
4
2
0
0
6
12
18
24
30
36
42
48
V
DS
=96V
I
D
=10A
6-11
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