60
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Feb. 2003
FEATURES
60V , 30A , R
DS(ON)
=25m
@V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-251 & TO-252 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous @T
J
=125 C
-Pulsed
I
D
30
A
I
DM
120
A
Drain-Source Diode Forward Current
I
S
30
A
Maximum Power Dissipation
P
D
W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
3
50
/W
C
/W
C
CED6060R/CEU6060R
@Tc=25 C
Derate above 25 C
50
0.3
W/ C
S
G
D
CEU SERIES
TO-252AA(D-PAK)
CED SERIES
TO-251(l-PAK)
G
G
S
S
D
D
6
6-42
CED6060R/CEU6060R
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250
A
=
60
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
60V, V
GS
0V
=
=
25
A
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
= 0V
=
100
nA
ON CHARACTERISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250
A
=
2
4
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 24A
25
m
On-State Drain Current
I
D(ON)
V
GS
= 10V, V
DS
= 10V
60
20
A
S
Forward Transconductance
FS
g
V
DS
= 10V, I
D
= 24A
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 30V,
I
D
= 30A,
V
GS
= 10V,
R
GEN
= 7.5
15
20
ns
ns
ns
ns
250
300
45
60
130
150
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=48V, I
D
= 30A,
V
GS
=10V
36
43
nC
nC
nC
9
19
Fall Time
6
DRAIN-SOURCE AVALANCHE RATING
a
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
E
AS
I
AS
V
DD
25V,
=
L 25
H
=
200
30
A
mJ
6-43
R
G
25
=
CED6060R/CEU6060R
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
6
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
D
r
a
in
Current(A)
I
D
,
D
r
ain
Current
(A)
DYNAMIC CHARACTERISTICS
b
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
1178
P
F
428
P
F
P
F
95
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =24A
0.9
1.3
V
b
6-44
-55 C
40
30
20
10
0
2
3
4
5
6
7
8
25 C
T
J
=125 C
40
35
30
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
=10,8,7V
6V
V
GS
=5V
4V
CED6060R/CEU6060R
6
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth,
Normalized
Gate-Source
Threshold
Voltage
g
FS
,
Transconductance
(S)
BV
DSS
,
N
ormalized
Drain-Source
Breakdown
Voltage
Is,
Source-drain
c
urrent
(A)
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
1.15
1.10
1.05
1.0
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250 A
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250 A
50
40
30
20
10
0
0
10
20
30
40
V
DS
=10V
100
10
1
0.4
0.6
0.8
1.0
1.2
1.4
Ciss
Coss
Crss
1800
1500
1200
900
600
300
0
0
10
15
20
25
30
25 C
-55 C
3.0
2.5
2.0
1.5
1.0
0.5
0
0
10
20
30
50
40
V
GS
=10V
Tj=125 C
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
I
D
, Drain Current(A)
C
,
Capacitance
(pF)
Dr
ain-Source
On-Resistance
R
DS(ON)
,
Nor
maliz
ed
6-45
6
CED6060R/CEU6060R
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
INVERTED
Transient
Thermal
Impedance
2
1
0.1
0.01
0.01
0.1
1
10
100
1000
10000
P
DM
t
1
t
2
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P
DM
* R
JA
(t)
4. Duty Cycle, D=t1/t2
r(t),Normalized
Effective
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
V
GS
,
Gate
t
o
S
ource
Voltage
(V)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
I
D
,
D
rain
Current
(A)
300
100
10
1
1
10
60 100
V
GS
=10V
Single Pulse
Tc=25 C
R
DS
(ON
)Limit
DC
10m
s
100m
s
1ms
100
s
10
s
15
12
9
6
3
0
0
6
12
18
24
30
36
42
48
V
DS
=48V
I
D
=30A
6-46
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