20
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V , 26A , R
DS(ON)
=30m
@V
GS
=4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-251 & TO-252 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
12
V
Drain Current-Continuous
-Pulsed
I
D
26
A
I
DM
78
A
Drain-Source Diode Forward Current
I
S
26
A
Maximum Power Dissipation
P
D
W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
4
50
/W
C
/W
C
R
DS(ON)
=40m
@V
GS
=2.5V.
CED9926/CEU9926
@Tc=25 C
Derate above 25 C
38
0.25
W/ C
S
G
D
CEU SERIES
TO-252AA(D-PAK)
CED SERIES
TO-251(l-PAK)
G
G
S
S
D
D
6
6-82
CED9926/CEU9926
ELECTRICAL CHARACTERISTICS (T
C
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D=
250
A
20
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V
1
A
Gate-Body Leakage
I
GSS
V
GS
= 12V, V
DS
= 0V
100
nA
ON CHARACTERISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
0.5
1.5
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 4.5V, I
D
= 8A
30
m
V
GS
= 2.5V, I
D
= 6.6A
40
m
On-State Drain Current
I
D(ON)
V
DS
= 5V, V
GS
= 4.5V
26
15
A
S
Forward Transconductance
FS
g
V
DS
= 10V, I
D
= 8A
DYNAMIC CHARACTERISTICS
b
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
500
P
F
300
P
F
P
F
140
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= 1A
V
GS
= 4.5V,
R
GEN
=6
20
40
ns
ns
ns
ns
18
40
60
108
28
56
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
nC
nC
nC
C
Fall Time
6-83
4
10
2.9
15
V
DS
= 10V,I
D
= 8A
V
GS
= 4.5V
6
2.3
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 4A
1.3
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
C
,
Capacitance
(pF)
I
D
,
D
r
a
in
Current
(A)
I
D
,
D
r
a
in
Current
(A)
6-84
CED9926/CEU9926
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
On-Resistance(Ohms)
R
DS(ON)
,
R
DS(ON)
,
N
or
maliz
e
d
15
12
9
6
3
0
0.5
1
1.5
2
2.5
25 C
Tj=125 C
-55 C
30
25
20
15
10
5
0
0
1
2
4
3
V
GS
=1.5V
V
GS
=2V
V
GS
=2.5V
V
GS
=4.5,3.5,3V
6
0
5
10
15
20
Ciss
Coss
Crss
0
1000
800
600
400
200
-100
-50
0
50
100
200
2.2
1.9
1.6
1.3
1.0
0.7
0.4
V
GS
=4.5V
I
D
=8A
150
CED9926/CEU9926
with Temperature
Figure 6. Breakdown Voltage Variation
Figure 5. Gate Threshold Variation
with Temperature
Vth,
Normalized
Gate-Source
Threshold
Voltage
g
FS
,
Transconductance
(S)
V
GS
,
Gate
t
o
Source
Voltage
(V)
BV
DSS
,
Normalized
Drain-Source
Breakdown
Voltage
Is,
Source-drain
c
urrent
(A)
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
D
rain
Current
(A)
6-85
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250 A
5
0
1
2
3
4
0
3
6
9
12
V
DS
=10V
I
D
=8A
50
10
1.0
0.1
0.6
0.8
1.0
1.2
1.4
20
16
12
8
4
0
0
3
6
9
12
V
DS
=10V
10
10
-1
10
1
0
10
1
10
-2
10
0
10
-1
10
2
10
2
T
A
=25 C
Single Pulse
R
JA
=
50 C/W
DC
10ms
10s
1s
100ms
R
DS
(ON)Li
mit
6
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250 A
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
CED9926/CEU9926
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
6-86
4
INVERTED
Transient
Thermal
Impedance
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
r(t),Normalized
Effective
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
10
-4
10
-3
10
-2
10
-1
10
0
P
DM
t
1
t
2
1. R
JC
(t)=r (t) * R
JC
2. R
JC
=See Datasheet
3. T
JM-
T
C
= P* R
JC
(t)
4. Duty Cycle, D=t1/t2
10
-3
10
-2
10
-1
10
0
10
2
10
1
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
6
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