30
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V , 5.1A , R
DS(ON)
=45m
@V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
TSSOP-8 for Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous
-Pulsed
I
D
5.1
20
1.7
2.0
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
62.5
/W
C
R
DS(ON)
=65m
@V
GS
=4.5V.
CEG3456
a
a
a
a
b
9-22
D
TSSOP-8
D
D
S
G
S
S
S
(2,3,6,7)S
(4)G
(1,5,8)D
9
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=250
A
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V, V
GS
=0V
1
A
Gate-Body Leakage
I
GSS
V
GS
= 20V, V
DS
=0V
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250
A
1
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=5.1A
45
m
V
GS
=4.5V, I
D
=4.3A
65
m
On-State Drain Current
I
D(ON)
V
DS
=5V, V
GS
=10V
15
A
7.2
S
Forward Transconductance
FS
g
V
DS
=10V, I
D
=5.1A
DYNAMIC CHARACTERISTICS
C
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 15V, V
GS
= 0V
f =1.0MH
Z
364
P
F
197
P
F
P
F
62
SWITCHING CHARACTERISTICS
C
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall time
V
DD
= 15V,
I
D
=1A,
V
GEN
= 10V,
R
GEN =
6
12
30
ns
ns
ns
ns
10
30
30
50
30
14
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
=5.1A,
V
GS
=10V
10
15
nC
nC
nC
2
3
C
9-23
55
37
CEG3456
9
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =1.7A
1.2
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
D
r
a
in
Current(A)
C
,
Capacitance
(pF)
I
D
,
D
r
a
in
Current
(A)
a.Surface Mounted on FR4 Board, t 10sec.
9-24
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
On-Resistance(Ohms)
R
DS(ON)
,
-50 -25
0
25
50
75
100 125 150
1.80
1.60
1.40
1.20
1.00
0.80
0.60
V
GS
=10V
I
D
=5.1A
R
DS(ON)
,
N
or
maliz
ed
600
500
400
300
200
100
0
5
10
15
20
25
30
Ciss
Coss
Crss
0
0
1
2
3
4
5
-55 C
6
9
12
15
18
3
Tj=125 C
25 C
20
16
12
8
4
0
0
1
2
3
4
5
6
V
GS
=3V
V
GS
=4V
V
GS
=10,8,6,5V
CEG3456
9
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth,
Normalized
Gate-Source
Threshold
Voltage
g
FS
,
Transconductance
(S)
V
GS
,
Gate
t
o
Source
Voltage
(V)
BV
DSS
,
Normalized
Drain-Source
Breakdown
Voltage
Is,
Source-drain
c
urrent
(A)
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
D
rain
Current
(A)
9-25
1.60
1.40
1.20
1.00
0.60
0.80
0.40
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250 A
-50 -25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250 A
20
10
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
10
8
6
4
12
0
0
2
4
6
8
10
2
V
DS
=10V
10
10
-2
10
10
1
0
-1
10
1
10
-2
10
0
10
-1
10
2
10
2
T
A
=25 C
Single Pulse
Tj=150 C
10
0
2
4
6
8
0
3
6
9
12
V
DS
=15V
I
D
=5.1A
DC
1s
100ms
10ms
1ms
RDS(O
N)
Limit
CEG3456
9
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
9-26
4
INVERTED
Transient
Thermal
Impedance
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
r(t),Normalized
Effective
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
10
-4
10
-3
10
-2
10
-1
10
0
P
DM
t
1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P* R
JA
(t)
4. Duty Cycle, D=t1/t2
10
-3
10
-2
10
-1
10
0
10
2
10
1
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
CEG3456
9
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