-30
P-Channel Enhancement Mode Field Effect Transistor
March 1998
FEATURES
-30V , -7.9A , R
DS(ON)
=24m
@V
GS
=-10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous @T
J
=125 C
-Pulsed
I
D
7.9
25
-2.1
2.5
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
50
/W
C
R
DS(ON)
=40m
@V
GS
=-4.5V.
CEM8435A
a
a
a
a
b
1
2
3
4
8
7
6
5
S
S
S
G
D
D
D
D
5
SO-8
1
5-83
CEM8435A
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250
A
=
-30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-24V, V
GS
0V
=
=
-1
A
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
= 0V
=
100
nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250
A
=
-1
-3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
-10V, I
D
-7.0A
17
24
m
V
GS
-4.5V, I
D
-5.8A
27
40
m
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -10V
-25
15
A
S
Forward Transconductance
FS
g
V
DS
-10V, I
D
- 7.0A
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
2647
P
F
870
P
F
P
F
227
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
D
= -10V,
I
D
= -1A,
V
GS
= - 10V,
R
GEN
= 6
22
30
ns
ns
ns
ns
20
28
105
145
60
84
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-15V, I
D
= -7.0A,
V
GS
=-10V
32
38
nC
nC
nC
4
15
C
Fall Time
=
=
=
=
=
=
5-84
5
CEM8435A
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
C
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = -2.1A
-0.75 -1.2
V
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
-V
DS
, Drain-to Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain Current(A)
C
,
Capacitance
(pF)
-I
D
,
D
r
ain
Current
(A)
-I
D
,
D
r
ain
Current
(A)
5-85
5
25
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
-V
GS
=10,8,7,6,5V
-V
GS
=4V
-V
GS
=3V
25 C
50
40
30
20
10
0
0
1
2
3
4
5
6
-55 C
Tj=125 C
Tj=125 C
25 C
-55 C
2
1.5
1.0
0.5
0
5
10
15
20
V
GS
=-10V
Dr
ain-Soure
On-Resistance
R
DS(ON)
,Nor
maliz
e
d
0
5
10
15
20
25
30
Ciss
Coss
Crss
3600
3000
2400
1800
1200
600
0
CEM8435A
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth,
Normalized
Gate-Source
Threshold
Voltage
g
FS
,
Transconductance
(S)
V
GS
,
Gate
t
o
Source
Voltage
(V)
BV
DSS
,
Normalized
Drain-Source
Breakdown
Voltage
-Is,
Source-drain
c
urrent
(A)
Figure 7. Transconductance Variation
with Drain Current
-I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
-V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
-V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
-I
D
,
D
rain
Current
(
A)
5-86
5
-50 -25
0
25
50
75
100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=-250 A
16
12
8
4
20
0
0
5
10
15
20
V
DS
=-15V
20.0
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
=0V
10
8
6
4
2
0
0
7
14
21
28
35
42
49
56
V
DS
=-15V
I
D
=-7.0A
1.09
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=-250 A
80
10
1
0.1
0.03
0.1
1
10
30 50
R
DS
(ON)
Limit
V
GS
=-10V
Single Pulse
T
A
=25 C
10ms
10
0m
s
1s
DC
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
Transient
Thermal
Impedance
2
1
0.1
0.01
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
r(t),Normalized
Effective
5-87
5
CEM8435A
INVERTED
Duty Cycle=0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-4
10
-3
10
-2
10
-1
1
10
100
P
DM
t
1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P
DM
* R
JA
(t)
4. Duty Cycle, D=t
1
/t
2
-V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
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