-30
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V , -1.9A , R
DS(ON)
=200m
@V
GS
=-10V.
High dense cell design for low R
DS(ON)
.
Rugged and reliable.
SOT-23 Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous
-Pulsed
I
D
-1.9
-10
-1.25
1.25
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
100
/W
C
R
DS(ON)
=320m
@V
GS
=-4.5V.
CES2303
a
a
a
a
b
S
G
D
G
D
S
SOT-23
1
7
CES2303
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= -250
A
-30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30V, V
GS
= 0V
-1
A
Gate-Body Leakage
I
GSS
V
GS
= 20V, V
DS
= 0V
100 nA
ON CHARACTERISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250
A
-1
-3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= -10V, I
D
= -1.7A
200
m
V
GS
= -4.5V, I
D
= -1.3A
320
m
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -10V
-6
2.4
A
S
Forward Transconductance
FS
g
V
DS
= -10V, I
D
= - 1.7A
DYNAMIC CHARACTERISTICS
c
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
230
P
F
90
P
F
P
F
20
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -15V,
I
D
= -1A,
V
GEN
= -10V,
R
GEN
= 6
10
20
ns
ns
ns
ns
10
20
20
35
6
20
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-15V, I
D
= -1.7A,
V
GS
=-10V
6.0
nC
nC
nC
0.8
1.5
C
Fall Time
7
2
10
150
230
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
C
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =-1.25A
-1.2
V
b
Notes
a.Surface Mounted on FR4 Board, t 5sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
-V
DS
, Drain-to Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
C
,
Capacitance
(pF)
-I
D
,
D
r
ain
Current
(A)
-I
D
,
D
r
ain
Current
(A)
7
3
CES2303
0
6
12
18
24
30
Ciss
Coss
Crss
400
300
200
100
0
10
8
6
4
2
0
0
2
4
6
8
10
V
GS
=10,8,6V
V
GS
=3V
V
GS
=5V
V
GS
=4V
10
8
6
4
2
0
0
1
2
3
4
5
6
-55 C
Tj=125 C
25 C
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
On-Resistance(Ohms)
-50 -25
0
25
50
75
100 125 150
1.80
1.60
1.40
1.20
1.00
0.80
0.60
V
GS
=-10V
I
D
=-1.7A
R
DS(ON)
,
N
or
maliz
e
d
R
DS(ON)
,
CES2303
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth,
Normalized
Gate-Source
Threshold
Voltage
g
FS
,
Transconductance
(S)
V
GS
,
Gate
t
o
Source
Voltage
(V)
BV
DSS
,
Normalized
Drain-Source
Breakdown
Voltage
-Is,
Source-drain
c
urrent
(A)
Figure 7. Transconductance Variation
with Drain Current
-I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
-V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
-V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
-I
D
,
D
rain
Current
(
A)
7
5
4
0
1
2
3
0
1
2
3
4
V
DS
=-10V
4
1.60
1.40
1.20
1.00
0.60
0.80
0.40
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=-250 A
-50 -25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250 A
1
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1.2
10
1.0
10
10
-1
10
10
2
1
0
10
-2
10
0
10
1
10
-1
T
A
=25 C
Single Pulse
Tj=150 C
RDS(O
N)
Lim
it
DC
1s
100ms
1ms
10ms
8
10
6
4
2
0
0
1
3
4
5
V
DS
=-15V
I
D
=-1.7A
2
6
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
Transient
Thermal
Impedance
2
1
0.1
0.01
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
r(t),Normalized
Effective
5
7
CES2303
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
INVERTED
Duty Cycle=0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-4
10
-3
10
-2
10
-1
1
10
100
P
DM
t
1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P
DM
* R
JA
(t)
4. Duty Cycle, D=t
1
/t
2
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
Transient
Thermal
Impedance
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
r(t),Normalized
Effective
10
-4
10
-3
10
-2
10
-1
10
0
P
DM
t
1
t
2
1. R
JA
(t)=r (t) * R
JA
2. R
JA
=See Datasheet
3. T
JM-
T
A
= P* R
JA
(t)
4. Duty Cycle, D=t1/t2
10
-3
10
-2
10
-1
10
0
10
2
10
1
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
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