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Электронный компонент: CPC5602

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DS-CPC5602C-R2.1
1
CPC5602C
N Channel Depletion Mode FET
Part #
Description
CPC5602C
N- Channel Depletion Mode FET, SOT-223
Package
CPC5602CTR
N- Channel Depletion Mode FET, SOT-223
Package
Tape and Reel (1000 units min)
Applications
Features
Description
Ordering Information
Package Pinout
Support Component for LITELINK
TM
Data Access Arrangement (DAA)
Telecom
Low on resistance 8 ohms
Breakdown voltage 350V minimum
High input impedance
Low input and output leakage
Small package size SOT-223
PC Card (PCMCIA) Compatible
PCB Space and Cost Savings
The CPC5602C is an "N" channel depletion mode
Field Effect Transistor (FET) that utilizes Clare's
proprietary third generation vertical DMOS process.
The third generation process realizes world class,
high voltage MOSFET performance in an economical
silicon gate process. The vertical DMOS process
yields a highly reliable device particularly in difficult
application environments such as
telecommunications.
One of the primary applications for the CPC5602C is
as a linear regulator/ hook switch for the LITELINK
TM
family of Data Access Arrangements (DAA) Devices
CPC5610A, CPC5611A, CPC5620 and CPC5621A.
The CPC5602C has a typical on-resistance of 8
, a
breakdown voltage exceeding 350V and is available
in an SOT-223 package. As with all MOS devices, the
FET structure prevents thermal runaway and thermal-
induced secondary breakdown.
D
4
1 2 3
G D S
Pin #
Name
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
www.clare.com
2
CPC5602C
Rev. 2.1
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Breakdown Voltage
V
(BR)DS
-
350
-
-
V
Gate-to-Source Off Voltage
V
GS(off)
I
D
= 2A, V
DS
=10V, V
DS
=100V
-3.9
-2
V
Drain-to-Source Leakage
I
DS(off)
V
GS
= -5V, V
DS
=110V
-
-
1
A
Current
V
GS
= -5V, V
DS
=350V
-
-
100
A
Drain Current
I
D
V
GS
= -2.7V, V
DS
=5V, V
DS
=50V
-
-
5
mA
V
GS
= -0.57V, V
DS
=5V
130
-
-
mA
On Resistance
R
DS(on)
V
GS
= -0.35V, I
DS
=50mA
-
8
14
Gate Leakage Current
I
GSS
V
GS
=10V, V
GS
=-10V
-
-
0.1
A
Gate Capacitance
C
ISS
V
DS
= V
GS
=0V
-
-
300
pF
Thermal Resistance
JC
-
-
-
14
o
C/W
Electrical Characteristics (@25
o
C unless otherwise specified)
Parameter
Min
Max
Units
V
DS
Voltage
-
350
V
Total Package Dissipation
-
2.5
W
Operational Temperature
-40
+85
o
C
Storage Temperature
-40
+125
o
C
Soldering Temperature
-
+220
o
C
(10 seconds Max)
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Absolute Maximum Ratings (@ 25 C)
Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions
at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare's Standard Terms and Conditions of Sale, Clare, Inc. assumes no liability whatsoever, and
disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support
or sustain life, or where malfunction of Clare's product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. Clare, Inc. reserves the right to discontinue or make
changes to its products at any time without notice.
Specification: DS-CPC5602C-R2.1
Copyright 2003, Clare, Inc.
All rights reserved. Printed in USA.
2/5/03
For additional information please visit our website at: www.clare.com
MECHANICAL DIMENSIONS
3.80
(0.15)
2.00
(0.079)
2.00
(0.079)
2.30
(0.091)
1.50
(0.059)
2.30
(0.091)
6.30
(0.248)
1.956 MAX.
(0.077 MAX.)
Embossment
Embossed Carrier
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
330.2 DIA.
(13.00 DIA.)
DIMENSIONS:
mm
(inches)
Tape and Reel Packaging for the SOT-223
NOTE: Tape dimensions not shown, comply with JEDEC Standard EIA-481-2
12.0 0.1
(0.472 0.004)
7.0 0.1
(0.276 0.004)
7.5 0.1
(0.295 0.004)
16.0 0.3
(0.630 0.012)
6.505 0.205
(0.256 0.008)
3.00 0.100
(0.118 0.004)
3.505 0.205
(0.138 0.008)
6.9975 0.2925
(0.2755 0.0115)
0.6985 0.0885
(0.0275 0.0035)
2.286
(0.090)
1.676 0.127
(0.066 0.005)
0.061 0.041
(0.0024 0.0016)
10
o
MAX
0.2795 0.0505
(0.0110 0.0020)
1.740 0.241
(0.0685 0.0095)
0.9655 0.1015
(0.038 0.0040)
A
Coplaner to A 0.08/(0.003) 4 PL.
Note: Values are typical except where noted.