COMPOSITE MODULES INCORPORATED
61 Union Street
Attleboro, Massachusetts
02703
Phone: (508) 226-6969
Fax: (508) 226-0938
E-Mail: sales@cmodules.com
CMI-12024SI Features:
PACKAGE DIMENSIONS: (Dimensions in inches)
Single N-Channel IGBT
In A Hermetic TO-258 Package
The CMI-12024SI is a packaged 1200 Volt
IGBT that features high input impedance, fast
switching, and low Vsat typical of bipolar transis-
tors. This device is ideally suited for motor drives,
UPS converters and power supplies. The device is
hermetically sealed for use in harsh enviroments.
Also available with parallel diode.
V
ce
= 1200V
Vcesat = 2.8 V
@Vge=15V I
c
= 24A
u
SMALL CASE SIZE
u
HIGH INPUT IMPEDANCE
u
HERMETIC PACKAGE
u
LOW Vsat
u
FAST SWITCHING
u
AVAILABLE WITH FREE WHEELING
DIODE
u
ISOLATED PACKAGE
Description:
1. Gate
2. Emitter
3. Collector
Pin Connections:
CMI-12024-SI
Preliminary
COMPOSITE MODULES INCORPORATED
61 Union Street Attleboro, Massachusetts 02703
Phone: (508) 226-6969
Fax: (508) 226-0938
E-Mail: sales@cmodules.com
Absolute Maximum Ratings
Collector to Emitter Voltage, V
CE
. . . . . . . . . . . . . . . . . . . . . . . . . 1200
Gate to Emitter Voltage, V
GE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Continuous Collector Current, I
C
, 90C (Case) . . . . . . . . . . . . . . . . 24A
Pulsed Collector Current, I
CM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 90A
Power Dissipation, P
D
, 25C (Case) . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Temperature Range, T
J
(Junction) . . . . . . . . . . . . . . . . -55C to +150C
Thermal Resistance Junction to Case, O
JC
. . . . . . . . . . . . . . . . . . . 1.70C/W
Thermal Resistance Junction to Ambient, O
JA
. . . . . . . . . . . . . . . . 62C/W
Storage Temperature Range, T
SIG
. . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +175C
Soldering Temperature (
10S) . . . . . . . . . . . . . . . . . . . . . . . . . . . 300C
ELECTRICAL SPECIFICATIONS: (T=25C unless otherwise noted)
CMI has made every effort to insure the accuracy of this specification. However, no responsibility is assumed for possible omissions and /or inaccuracies. CMI
reserves the right to make changes to this specification without further notice to improve reliability, function, or design. Changes and additions made after the pub-
lication of this data sheet will be reflected in updated sheets. CMI does not assume any liability arising out of the application or use of circuit described herein; nei-
Parameter
Min. Typ-. Max. Units
Conditions
V
(BR)CES
Collector-to Emitter Breakdown Voltage
1200
V
V
GE
=0V,IC=250A
V
(BR)ECS
Emitter-to Collector Breakdown Voltage
18
V
V
GE
=0V,IC=1.0A
V
(BR)CES/ TJ
Temperature Coeff. Of Breakdown Voltage
0.91
V/C V
GE
=0V,IC=2.0mA
2.77
3.5
IC=24A V
GE
=15V
3.28
IC = 45A, V
GE
=15V
2.54
IC=25A, T
J
=150C, V
GE
=15V
V
GE(TH)
Gate Threshold Voltage
3
6
V
CE
=V
GE
,IC=250A
Delta V
GE(TH)/ Tj
Temperature Coeff.of Threshold Voltage
-10
mV/C V
CE
=V
GE
,IC=2.0mA
gfe
Forward Transconductance
13
19
S
VCE=100V, IC=24A
250
V
GE
=0V,V
CE
=1200V
2
V
GE
=0V,V
CE
=10V,T
J
=25C
5000
V
GE
=0V,V
CE
=10V,T
J
=150C
I
GES
Gate-to-Emitter Leakage Current
100
nA
V
GE
=20V
Switching Characteristics
Qg
Total Gate Charge (turn on)
-
180
Qge
Gate-Emitter Charge (turn-on)
-
25
VCC = 400V
Qgc
Gate-Collector Charge (turn on)
-
70
VGE = 15
Td(on)
Turn-On Delay Time
-
36
tr
Rise Time
-
27
TJ = 25C
td(off)
Turn-Off-Delay
-
200
IC = 24A, VCC = 960V
tf
Fall Time
-
130
VGE = 15V, RG = 5.0 Ohms
Eon
Turn-on Switching Loss
-
1.21
Energy Losses Include "Tail"
Eoff
Turn-Off-Switching Loss
-
2.25
Ets
Total Switching Loss
-
3.46
VCC = 720, TJ=125C
VGE = 15V, RG = 5.0 Ohms
Td(on)
Turn-on Delay Time
-
35
TJ = 150C
tr
Rise Time
-
29
IC= 24A, Vcc = 960V
td(off)
Turn-Off Delay Time
-
380
VGE = 15V, RG = 5.0 Ohms
tf
Fall Time
-
280
Energy losses include tail
Ets
Total Switching Loss
-
7.8
mJ
LE
Internal Emitter Inductance
-
13
nH Measured 5 mm from package
Cies
Input Capacitance
-
2800
VGE = 0V
Coes
Output Capacitance
-
140
Vcc = 30V
Cres
Reverse Transfer Capacitance
-
53
f=1MHz
s
Collector-to Emitter Saturation Voltage
V
V
CE(ON)
A
I
CES
Zero Gate Voltage Collector Current
Tsc
Short Circuit Withstand Time
10
-
ns
pF
IC = 24
nC
ns
mJ
COMPOSITE MODULES INCORPORATED
SWITCHING CHARACTERISTICS: (T=25C unless otherwise noted)
Parameter
Min. Typ-. Max. Units
Conditions
V
(BR)CES
Collector-to Emitter Breakdown Voltage
1200
V
V
GE
=0V,IC=250A
V
(BR)ECS
Emitter-to Collector Breakdown Voltage
18
V
V
GE
=0V,IC=1.0A
V
(BR)CES/ TJ
Temperature Coeff. Of Breakdown Voltage
0.91
V/C V
GE
=0V,IC=2.0mA
2.77
3.5
IC=24A V
GE
=15V
3.28
IC = 45A, V
GE
=15V
2.54
IC=25A, T
J
=150C, V
GE
=15V
V
GE(TH)
Gate Threshold Voltage
3
6
V
CE
=V
GE
,IC=250A
Delta V
GE(TH)/ Tj
Temperature Coeff.of Threshold Voltage
-10
mV/C V
CE
=V
GE
,IC=2.0mA
gfe
Forward Transconductance
13
19
S
VCE=100V, IC=24A
250
V
GE
=0V,V
CE
=1200V
2
V
GE
=0V,V
CE
=10V,T
J
=25C
5000
V
GE
=0V,V
CE
=10V,T
J
=150C
I
GES
Gate-to-Emitter Leakage Current
100
nA
V
GE
=20V
Switching Characteristics
Qg
Total Gate Charge (turn on)
-
180
Qge
Gate-Emitter Charge (turn-on)
-
25
VCC = 400V
Qgc
Gate-Collector Charge (turn on)
-
70
VGE = 15
Td(on)
Turn-On Delay Time
-
36
tr
Rise Time
-
27
TJ = 25C
td(off)
Turn-Off-Delay
-
200
IC = 24A, VCC = 960V
tf
Fall Time
-
130
VGE = 15V, RG = 5.0 Ohms
Eon
Turn-on Switching Loss
-
1.21
Energy Losses Include "Tail"
Eoff
Turn-Off-Switching Loss
-
2.25
Ets
Total Switching Loss
-
3.46
VCC = 720, TJ=125C
VGE = 15V, RG = 5.0 Ohms
Td(on)
Turn-on Delay Time
-
35
TJ = 150C
tr
Rise Time
-
29
IC= 24A, Vcc = 960V
td(off)
Turn-Off Delay Time
-
380
VGE = 15V, RG = 5.0 Ohms
tf
Fall Time
-
280
Energy losses include tail
Ets
Total Switching Loss
-
7.8
mJ
LE
Internal Emitter Inductance
-
13
nH Measured 5 mm from package
Cies
Input Capacitance
-
2800
VGE = 0V
Coes
Output Capacitance
-
140
Vcc = 30V
Cres
Reverse Transfer Capacitance
-
53
f=1MHz
s
Collector-to Emitter Saturation Voltage
V
V
CE(ON)
A
I
CES
Zero Gate Voltage Collector Current
Tsc
Short Circuit Withstand Time
10
-
ns
pF
IC = 24
nC
ns
mJ
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