www.comchip.com.tw
COMCHIP
COMCHIP
SOT-23
Dimensions in inches (millimeters)
MDS0210001A
Page 1
.037(0.95) .037(0.95)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.0
20
(0.
5
)
.0
20
(0.
5
)
Top View
.10
3
(2.6)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.0
20
(0.
5
)
.056 (
1
.4
0)
Rating
Symbol
Value
Units
Continuous Reverse Voltage
V
R
70
V
DC
Peak Forward Current
I
F
215
mAdc
Peak Forward Surge Current
I
FM
(surge)
500
mAdc
Characteristic
Symbol
Max
Units
Total Device Dissipation FR 5 Board(1) T
A
= 25C
225
mW
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation Alumina Substrate,(2) T
A
= 25C
300
mW
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
Characteristic (OFF CHARACTERISTICS)
Symbol
Min
Max
Units
Reverse Breakdown Voltage ( I
(BR)
= 100 uAdc )
V
(BR)
70
-
Vdc
Reverse Voltage Leakage Current V
R
= 25 Vdc, T
J
= 150C
-
30
V
R
= 70 Vdc
-
2.5
V
R
= 70 Vdc, T
J
= 150C
-
50
Diode Capacitance (V
R
= 0, f = 1.0 MHz))
C
D
1.5
pF
Forward Voltage
I
F
= 1.0 mAdc
-
715
I
F
= 10 mAdc
-
855
I
F
= 50 mAdc
-
1000
I
F
= 150 mAdc
-
1250
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0mAdc) R
L
= 100
Trr
6.0
nS
mV
1.FR5 = 1.0 X 0.75X 0.062 in. 2.Aluminum = 0.4X 0.3X 0.024 in. 99.5% aluminum.
P
D
Electrical Characterics (TA = 25C unless otherwise noted)
I
R
VF
Maximum Ratings
Thermal Characteristics
P
D
uAdc
CATHODE
1
2
BAV99
ANODE
CATHODE
3
ANODE
1
2
CATHODE
3
ANODE
CATHODE
1
2
ANODE
CATHODE
3
ANODE
CATHODE
1
2
ANODE
CATHODE
3
ANODE
BAL99
BAW56
BAV70
3
2
1
Voltage: 70 Volts
Current: 215mA
BAV99 Thru BAW56
Features
Fast Switching Speed
Surface Mount Package Ideally Suited
for Automatic Insertio
For General Purpose Switching Applications
High Conductance
Mechanical data
Case: SOT -23, Plastic
Approx. Weight: 0.008 gram
This diodes is also available in other
a dual
chip inside with type
configurations including a dual common
cathode with type designation BAV70,
common anodes with type designation
BAW56 and single
Designation BAL99
Surface Mount Switching Diode
RATING AND CHARACTERISTIC CURVES (BAV99 Thru BAW56)
Surface Mount Switching Diode
www.comchip.com.tw
COMCHIP
MDS0210001A
Page 2
100
0.2
0.4
VF, F
orward Voltage (V)
0.6
0.8
1.0
1.2
10
1.0
0.1
TA = 85
C
10
0
VR, R
everse Voltage (V)
1.0
0.1
0.01
0.001
10
20
30
40
50
0.68
0
VR, R
everse Voltage (V)
0.64
0.60
0.56
0.52
C
D
, D
iode Capacitance
(pF)
2
4
6
8
I F
, F
orward Current (mA)
(mA)
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Capacitance
TA = 40
C
TA = 25
C
TA = 150C
T
A = 125C
TA = 85
C
TA = 55
C
TA = 25
C
I R
, R
everse Current
(
A)
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp trr
+10 V
2.0 k
820
0.1
F
DUT
VR
100
H
0.1
F
50
Output
Pulse
Generator
50
I
nput
Sampling
Oscilloscopes
tr
tp
t
10%
90%
IF
IR
trr
t
I
R(REC) = 1.0 mA
Output Pulse
(IF = IR = 10 mA;
Measured
at I
R(REC) = 1.0 mA)
IF
Input Signal
Figure 1. Recovery Time Equivalent Test Circuit
PDF 
ZIP