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MDS0903002A
Page 1
Voltage:10 Volts
Current: 50 mA
CDA3S06-G (RoHS Device)
Absolute Maximum Ratings: ( Ta = 25
o
C )
Symbol
Parameter
Value
Units
T
OP
Operating temperature
-40 to +85
0
C
V
S
Supply voltage
(Vp ~ Vn)
8
V
I
F
Continuous forward current
50
mA
P
O
Total power
1
W
* One diode conducting.
Electrical Ratings: ( Ta = 25
o
C )
Symbol
Characteristic
Min
Max
Units
Test Condition
V
F
Forward voltage
0.6
0.95
V
I
F
= 25 ma
V
R
Reverse breakdown voltage
9.5
11
V
I
R
= 1 ma
I
L
Leakage current
0.1
2.0
uA
8v
C
T
Capacitance
1.0
5.0
pF
@ 1Mhz
V
ESD
Channel clamp voltage
-
10
V
8kV HBM
V
PV
Peak ESD voltage capability
16
kV
HBM
Application
ESD
Positive Supply
Driver
Receiver
Neg. Supply or Gnd.
Schematic
Package (SOT23-6)
Feature
6
4
1
3
Marking " DN3 "
This diode network is designed to provide four
channels for active termination of high-speed
data signals to eliminate signal undershoot and
overshoot. The network has the added benefit
of acting to suppress any ESD voltage events
by shunting the energy to ground assuring
maximum reliability of electronic systems in
the field. Trigger levels are defined by the
positive and negative bias levels set by the
user.
RoHS Device has reflow temperature
profile of 260 deg C for 10 seconds
Comchip Technology Corporation Tel: 510-657-8671 Fax: 510-657-8921 www.comchiptech.com
"-G" suffix designates RoHS compliant version.
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