Io = 100mA
V
R
= 30 Volt s
0.087(2.20)
0.079(2.00)
0.016(0.40) Typ
0.055(1.40)
0.047(1.20)
0.043 (1.10)
0.035(0.90)
0.008(R0.2) Typ.
Dimensions in inches and (millimeter)
0805(2012)
CDBS001A
Features
Designed for mounting on small surface
Extremely thin package
Low stored charge
Majority carrier conduction
Mechanical data
Case: 0805(2012) Standard package,
molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, method 2026
Polarity: Indicated by cathode band
Mounting position: Any
Weight: 0.0048 gram (approximately)
SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
www.comchip.com.tw
COMCHIP
COMCHIP
Page 1
Page 1
Parameter
Repetitive peak reverse voltage
Average forward current
Forward current , surge peak
Capacitance between terminals
Power Dissipation
Storage temperature
Junction temperature
Conditions
Symbol
V
RRM,
V
R
I
O
I
FSM
C
T
P
D
T
STG
T j
Min
-40
-40
Max
30
100
6
300
+125
+125
Unit
V
V
V
V
V
uA
Typ
1000
Parameter
Forward voltage 1
Forward voltage 2
Forward voltage 3
Forward voltage 4
Forward voltage 5
Reverse current
Conditions
IF = 0.1 mA DC
IF = 1 mA D C
IF = 10 m A DC
IF = 30 m A DC
IF = 100 mA DC
V
R
= 25 V
Symbol
V
F
V
F
V
F
V
F
Min
Typ
Max
0.24
0.32
0.40
0.50
1.00
2
Unit
C
C
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
F=1MH
Z
and 10 V DC reverse voltage
Maximum Rating ( at T
A
= 25
C
unless otherwise noted )
V
mA
mA
pF
mW
Symbol
V
RRM,
V
R
I
O
I
FSM
C
T
P
D
T
STG
T j
Electrical Characteristics ( at TA = 25 C unless otherwise noted )
V
F
I
R
RDS0208017-C
RATING AND CHARACTERISTIC CURVES (CDBS001A)
F
o
r
w
a
r
d
c
u
r
r
e
n
t
(
m
A
)
Fig. 1 - Forward characteristics
Forward voltage (V)
Reverse voltage (V)
Fig. 2 - Reverse characteristics
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
A
)
Fig. 4 - Current derating curve
Ambient temperature ( C )
0
20
40
60
80
100
0
25
50
75
100
125
150
Mounting on glass epoxy PCBs
A
v
e
r
a
g
e
f
o
r
w
a
r
d
c
u
r
r
e
n
t
(
%
)
www.comchip.com.tw
COMCHIP
COMCHIP
Fig. 3 - Capacitance between
terminals characteristics
C
a
p
a
c
i
t
a
n
c
e
b
e
t
w
e
e
n
t
e
r
m
i
n
a
l
s
(
p
F
)
20
SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
Page 2
75 C
25 C
125 C
-2
5
C
7
5
C
2
5
C
1
2
5
C
0.1
0.2
0.4
0.6
0
0.5
0.3
100u
10u
1m
100n
1u
0 10 20 30 40 50
1000
1
10
100
f = 1 MHz
Ta = 25 C
RDS0208017-C
Reverse voltage (V)
1
10
30
0
5
10
15
20
25
35
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