Io = 200 mA
V
R
= 45 Volt s
CDBU0245
Features
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current (I
R
=0.1uA typ.
@V
R
=10V).
Majority carrier conduction.
Mechanical data
Case: 0603 (1608) Standard package ,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any.
Weight: 0.003 gram (approximately).
SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
Unit
V
uA
pF
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Conditions
I
F
= 200 mA DC
V
R
= 10 V
f = 1MHz, and 10 VDC reverse voltage
Symbol
V
F
I
R
C
T
Min
Typ
9
Max
0.55
1
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COMCHIP
COMCHIP
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current , surge peak
Power Dissipation
Storage temperature
Junction temperature
Conditions
Symbol
V
RRM
V
R
Io
I
FSM
P
D
T
STG
T j
Min
-40
-40
Max
50
45
200
150
+125
+125
Typ
2000
Unit
V
V
mA
mA
mW
C
C
Maximum Rating
( at T
A
= 25 C unless otherwise noted )
Electrical Characteristics
( at T
A
= 25 C unless otherwise noted )
8.3 ms single half sine-wave superimposed
on rate load ( JEDEC method )
RDS0301009-B
0.071(1.80)
0.063(1.60)
0.010(0.25) Typ.
0.039(1.00)
0.031(0.80)
0.033 (0.85)
0.027 (0.70)
Dimensions in inches and (millimeter)
0603(1608)
0.012 (0.30) Typ.
0.014(0.35) Typ.
(Lead-free Device)
RATING AND CHARACTERISTIC CURVES (CDBU0245)
F
o
r
w
a
r
d
c
u
r
r
e
n
t
(
m
A
)
Fig. 1 - Forward characteristics
Forward voltage (V)
Reverse voltage (V)
Fig. 2 - Reverse characteristics
R
e
v
e
r
s
e
c
u
r
r
e
n
t
(
A
)
Fig. 4 - Current derating curve
0
20
40
60
80
100
0
25
50
75
100
125
150
Mounting on glass epoxy PCBs
A
v
e
r
a
g
e
f
o
r
w
a
r
d
c
u
r
r
e
n
t
(
%
)
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COMCHIP
COMCHIP
Fig. 3 - Capacitance between
terminals characteristics
Reverse voltage (V)
C
a
p
a
c
i
t
a
n
c
e
b
e
t
w
e
e
n
t
e
r
m
i
n
a
l
s
(
p
F
)
1
10
100
SMD Schottky Barrier Diode
SMD Schottky Barrier Diode
30
0
5
10
15
20
25
35
0.1
0.2
0.4
0.7
0
0.5
0.3
1000
0.001
10
100
Ambient temperature ( C )
f = 1 MHz
Ta = 25 C
RDS0301009-B
0.6
1
0.1
0.01
7
5
C
-2
5
C
1
2
5
C
2
5
C
0 10 20 30 40
10u
1m
1n
1u
100u
10m
100n
10n
-25 C
75 C
25 C
125 C
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