Voltage: 100 Volts
Current: 200 mA
CDST7000
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for
For General Purpose Switching
High Conductance
Mechanical data
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Approx. Weight: 0.008 gram
Automatic Insertion
Applications
Surface Mount Switching Diode
Surface Mount Switching Diode
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COMCHIP
COMCHIP
MDS0301004A
Page 1
Rating
Symbol
Value
Units
Continuous Reverse Voltage
V
R
100
V
DC
Peak Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM (surge)
500
mAdc
Characteristic
Symbol
Max
Units
Total Device Dissipation FR 5 Board(1) T
A
= 25C
225
mW
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction t o Ambient
R
JA
556
C/W
Total Device Dissipation Alumina S ubstrate,(2) T
A
= 25C
300
mW
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction t o Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
Characteristic (OFF CHARACTERISTICS)
Symbol
Min
Max
Units
Reverse Breakdown Voltage ( I
(BR)
= 100 uAdc )
V
(BR)
100
-
Vdc
Reverse Voltage Leakage Current V
R
= 50 Vdc
I
R
-
1
V
R
= 100 Vdc
I
R2
-
3
V
R
= 50 Vdc, 125C
I
R3
-
100
Forward Voltage I
F
= 1.0 mAdc
0.55
0.7
I
F
= 10 mAdc
0.67
0.82
I
F
= 100 mAdc
0.75
1.1
Reverse Recovery Time (I
F
= I
R
= 10 mAdc) (Figure 1)
Trr
4.0
nS
Diode Capacitance (V
R
= 0)
C
-
1.5
pF
Maximum Ratings
Thermal Characteristics
P
D
1.FR5 = 1.0 X 0.75X 0.062 in. 2.Alumina = 0.4X 0.3X 0.024 in. 99.5% alumina.
P
D
Electrical Characterics (TA = 25C unless otherwise noted)
uAdc
V
F
Vdc
SOT-23
Dimensions in inches (millimeters)
.037(0.95) .037(0.95)
.00
6
(
0.1
5
)
max.
.1
19
(3.
0
)
.0
20
(0.
5
)
.0
20
(0.
5
)
Top View
.10
3
(2.6)
.00
6
(
0
.15)
.0
4
4
(1
.
1
0
)
.110 (2.8)
.0
47
(1
.
2
0
)
.00
2
(0
.
0
5)
.0
86
(2.
2
)
.0
3
5
(0
.
9
0
)
.0
20
(0.
5
)
.056 (
1
.4
0)
3
1
2
1
ANODE
3
CATHODE/ANODE
2
CATHODE
MDS0301004A
Page 2
Surface Mount Switching Diode
Surface Mount Switching Diode
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COMCHIP
COMCHIP
Rating and Characteristic Curves (CDST7000)
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp trr
+10 V
2 k
820
0.1
F
DUT
VR
100
H
0.1
F
50
utput
Pulse
Generator
50
Input
Sampling
Oscilloscope
tr
tp
t
10%
90%
IF
IR
trr
t
IR(REC) = 1 mA
Output Pulse
(IF = IR = 10 mA; measured
at IR(REC) = 1 mA)
IF
Input Signal
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage
1.0
10
100
0.1
Figure 3. Leakage Current
10
0
1.0
0.1
0.001
0.01
10
20
30
40
50
I
1.0
1.2
0.2
0.4
0.6
0.8
Figure 4. Capacitance
0
0.68
0.64
0.60
0.52
0.56
2.0
4.0
6.0
8.0
, F
orward
C
urrent
(mA)
F
TA = 85
C
TA = 40
C
TA = 25
C
TA = 25
C
TA = 55
C
TA = 85
C
TA = 150
C
TA = 125
C
I
R
, Reverse Current(A)
V
F
, Forward Voltage(V)
V
R
V
R
, Reverse Voltage(V)
V
R
, Reverse Voltage(V)
C
D
, Diode Capacitance(
P
F)
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