Reverse Voltage: 50 - 1000 Volts
Forward Current: 1.0 Amp
CFRM101 Thru CFRM107
www.comchip.com.tw
COMCHIP
COMCHIP
Maximum Ratings and Electrical Characterics
MDS0208017B
Page 1
0.146(3.70)
0.012(0.30) Typ.
0.071(1.80)
0.055(1.40)
0.110(2.80)
0.094(2.40)
0.063(1.60)
0.055(1.40)
0.035(0.90) Typ.
0.035(0.90) Typ.
MINI SMA
Dimensions in inches and (millimeter)
0.161(4.10)
SMD Fast Recovery Rectifier
SMD Fast Recovery Rectifier
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Exceeds environmental standard MIL-S-
19500/228
Low leakage current
Mechanical data
Case: Mini SMA/SOD-123 molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight: 0.04 gram
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
Max. Average Forward Current
Max. Instantaneous Forward Current
at 1.0 A
Reverse recovery time
Max. DC Reverse Current at Rated DC
Blocking Voltage Ta=25
Ta=100
Typical. Thermal Resistance (Note 1)
Operating Junction Temperature
Storage Temperature
Symbol
V
RRM
V
DC
V
RMS
I
FSM
I o
V
F
Trr
I
R
R
JA
T j
T
STG
Unit
V
V
V
A
A
V
nS
uA
C/W
Note 1: Thermal resistance from junction to ambient.
CFRM
101
CFRM
102
50
50
35
600
600
420
100
100
70
30
1.0
1.3
- 5 5 t o + 1 5 0
32
5.0
50
- 5 5 t o + 1 5 0
CFRM
107
CFRM
106
CFRM
105
CFRM
104
CFRM
103
800
800
560
400
400
280
200
200
140
1000
1000
700
500
100
250
C
C
C
C
Rating and Characteristic Curves (CFRM101 Thru CFRM107)
www.comchip.com.tw
COMCHIP
COMCHIP
F
o
r
w
a
r
d
C
u
r
r
e
n
t
(
A
)
Forward Voltage (V)
Fig.2 - Forward Characteristics
MDS0208017B
Page 2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
P
e
a
k
S
u
r
g
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
(
A
)
Fig. 4 - Non repetitive Forward
Surge Current
Number of Cycles at 60Hz
SMD Fast Recovery Rectifier
SMD Fast Recovery Rectifier
1
100
10
0.1
0.01
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
D.U.T.
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
Fig. 6 - Current Derating Curve
Single Phase
Half Wave 60Hz
A
v
e
r
a
g
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
(
A
)
Ambient Temperature ( C)
0 25 50 75 100 125 150 175
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Fig. 3 - Junction Capacitance
Reverse Voltage (V)
J
u
n
c
t
i
o
n
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
0.01 0.1 1.0 10 100
5
0
10
15
35
30
25
20
0 20 40 60 80 100 120 140
1000
100
10
1.0
0.1
Percent of Rated Peak Reverse Voltage (%)
R
e
v
e
r
s
e
C
u
r
r
e
n
t
(
u
A
)
Fig. 1 - Reverse Characteristics
Tj=25 C
Tj=125 C
Tj=25 C
Pulse width 300uS
4% duty cycle
=1MHz and applied
4VDC reverse voltage
0
10
20
50
40
30
1 5 10 50 1 00
Tj=25 C
8.3mS Single Half Sine
Wave JEDEC methode
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