Reverse Voltage: 50 - 600 Volts
Forward Current: 2.0 Amp
CEFB201 Thru CEFB205
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COMCHIP
COMCHIP
Maximum Ratings and Electrical Characterics
MDS0210023A
Page 1
SMD Efficient Fast Recovery Rectifier
SMD Efficient Fast Recovery Rectifier
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
Max. Average Forward Current
Max. Instantaneous Forward Current
at 2.0 A
Reverse recovery time
Max. DC Reverse Current at Rated DC
Blocking Voltage Ta=25
Ta=100
Max. Thermal Resistance (Note 1)
Operating Junction Temperature
Storage Temperature
Symbol
V
RRM
V
DC
V
RMS
I
FSM
I o
V
F
Trr
I
R
R
JL
T j
T
STG
Unit
V
V
V
A
A
V
nS
uA
Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
CEFB CEFB CEFB CEFB CEFB
201 202 203 204 205
50
50
35
600
600
420
100
100
70
40
2.0
- 5 5 t o + 1 5 0
15
5.0
250
- 5 5 t o + 1 5 0
400
400
280
200
200
140
C/W
C
C
C
C
SMB/DO-214AA
Dimensions in inches and (millimeter)
0.008(0.20)
0.203(0.10)
0.083(2.11)
0.075(1.91)
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.220(5.59)
0.200(5.08)
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Super fast recovery time for high efficient
Built-in strain relief
Low forward voltage drop
Mechanical Data
Case: JEDEC DO-214AA molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.093 gram
35
0.875 1.1 1.25
25 35 50
Rating and Characteristic Curves (CEFB201 Thru CEFB205)
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COMCHIP
COMCHIP
F
o
r
w
a
r
d
c
u
r
r
e
n
t
(
A
)
Forward Voltage (V)
Fig.2 - Forward Characteristics
MDS0210023A
Page 2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
P
e
a
k
S
u
r
g
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
(
A
)
Fig. 4 - Non Repetitive Forward
Surge Current
Number of Cycles at 60Hz
SMD Efficient Fast Recovery Rectifier
SMD Efficient Fast Recovery Rectifier
Fig. 6 - Current Derating Curve
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
D.U.T.
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
0
10
20
50
40
30
1 5 10 50 1 00
10
1.0
0.1
0.01
0.001
Single Phase
Half Wave 60Hz
0 20 40 60 80 100 120 140
100
10
1.0
0.1
0. 01
Percent of Rated Peak Reverse Voltage (%)
R
e
v
e
r
s
e
C
u
r
r
e
n
t
(
u
A
)
Fig. 1 - Reverse Characteristics
Tj=25 C
Tj=125 C
Tj=25 C
Pulse width 300uS
4% duty cycle
Tj=25 C
A
v
e
r
a
g
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
(
A
)
Ambient Temperature ( C)
0 25 50 75 100 125 150 175
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
8.3mS Single Half Sine
Wave JEDEC methode
Tj=75 C
0.1 1.0 10 100
Fig. 3 - Junction Capacitance
Reverse Voltage (V)
J
u
n
c
t
i
o
n
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
2
10
100
CEFB201-203
CEFB205
CEFB204
200
Tj=25 C
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