Reverse Voltage: 50 - 600 Volts
Forward Current: 1.0 Amp
CSFM101 Thru CSFM105
www.comchip.com.tw
COMCHIP
COMCHIP
Maximum Ratings and Electrical Characterics
MDS0210018B
Page 1
SMD Super Fast Recovery Rectifier
SMD Super Fast Recovery Rectifier
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
Max. Average Forward Current
Max. Instantaneous Forward Current
at 1.0 A
Reverse recovery time
Max. DC Reverse Current at Rated DC
Blocking Voltage Ta=25
Ta=100
Typical. Thermal Resistance (Note 1)
Operating Junction Temperature
Storage Temperature
Symbol
V
RRM
V
DC
V
RMS
I
FSM
I o
V
F
Trr
I
R
R
JA
T j
T
STG
Unit
V
V
V
A
A
V
nS
uA
Note 1: Thermal resistance from junction to ambient.
CSFM CSFM CSFM CSFM CSFM
101 102 103 104 105
50
50
35
600
600
420
100
100
70
1.0
- 5 5 t o + 1 5 0
42
5.0
100
- 5 5 t o + 1 5 0
400
400
280
200
200
140
C/W
C
C
C
C
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Super fast recovery time 35-50 nS
Built-in strain relief
Low forward voltage drop
Mechanical Data
Case: Mini-SMA/SOD-123 molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.04 gram
30
0.95 1.3 1.5
35 50
0.146(3.70)
0.012(0.30) Typ.
0.071(1.80)
0.055(1.40)
0.110(2.80)
0.094(2.40)
0.063(1.60)
0.055(1.40)
0.035(0.90) Typ.
0.035(0.90) Typ.
MINI SMA
Dimensions in inches and (millimeter)
0.161(4.10)
Rating and Characteristic Curves (CSFM101 Thru CSFM105)
www.comchip.com.tw
COMCHIP
COMCHIP
F
o
r
w
a
r
d
c
u
r
r
e
n
t
(
A
)
Forward Voltage (V)
Fig.2 - Forward Characteristics
MDS0210016B
Page 2
SMD Super Fast Recovery Rectifier
SMD Super Fast Recovery Rectifier
Fig. 6 - Current Derating Curve
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0
-0.25A
-1.0A
|
|
|
|
|
|
|
|
1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
D.U.T.
10
NONINDUCTIVE
50
NONINDUCTIVE
W
W
10
1.0
0.1
0.01
0.001
Single Phase
Half Wave 60Hz
A
v
e
r
a
g
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
(
A
)
Ambient Temperature ( C)
0 25 50 75 100 125 150 175
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1 1.0 10 100
Fig. 3 - Junction Capacitance
Reverse Voltage (V)
J
u
n
c
t
i
o
n
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
14
12
10
8
6
4
2
0
Tj=25 C
Fig. 1 - Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0 20 40 60 80 100 120 140
1000
100
10
1.0
0.1
Tj=125 C
Tj=75 C
Tj=25 C
0 0.2 0. 4 0.6 0.8 1.0 1.2 1.4
CSFM101-103
Tj=25 C
Pulse width 300uS
4% duty cycle
CSFM104
CSFM105
P
e
a
k
s
u
r
g
e
F
o
r
w
a
r
d
C
u
r
r
e
n
t
(
A
)
Fig. 4 - Non Repetitive Forward
Surge Current
30
25
20
15
10
5
0
1 5 10 50 1 00
8.3mS Single Half Sine
Wave JEDEC methode
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
PDF 
ZIP