CPR3BS Rev. -
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
MegaBright
PlusTM LEDs
Cxxx-MB290-S0100-Plus
Features Applications
MegaBright
Plus
Performance
12.0mW min Blue
Single Wire Bond Structure
Class II ESD Rating
Outdoor LED Video Displays
Automotive Dashboard Lighting
White LEDs
Backlighting
Description
Cree's MegaBright
Plus
LEDs combine highly efficient InGaN materials with Cree's proprietary GSiC
substrate to deliver superior price/performance for high intensity blue LEDs. These LED chips have a
geometrically enhanced vertical chip structure to maximize light extraction efficiency, and require only a
single wire bond connection. Sorted Die Kits provide die sheets conveniently sorted into wavelength and
radiant flux bins. Cree's MB series chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as
outdoor full motion LED video signs, automotive lighting and white LEDs, yet can also be used in high
volume applications such as LCD backlighting. Cree's MB series chips are compatible with most radial and
SMT LED assembly processes.
Cxxx-MB290-S0100-Plus Chip Diagram
Top
side View
G
SiC LED Chip
300 x 300 m
Mesa (junction)
240 x 240 m
Gold Bond Pad
114 m Diameter
Anode (+)
h = 250 m
Backside
Metallization
Cathode (-)
InGaN
SiC Substrate
Bottom View
Die Cross Section
CPR3BS Rev. -
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
MegaBright
PlusTM LEDs
Cxxx-MB290-S0100-Plus
Maximum Ratings at T
A
= 25C
Notes 1&3
Cxxx-MB290-S0100-Plus
DC Forward Current
30mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100mA
LED Junction Temperature
125C
Reverse Voltage
5 V
Operating Temperature Range
-20C to +80C
Storage Temperature Range
-30C to +100C
Electrostatic Discharge Threshold (HBM)
Note 2
1000
V
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Class
2
Typical Electrical/Optical Characteristics at T
A
= 25C, If = 20mA
Note 3
Part Number
Forward Voltage
(V
f,
V)
Reverse Current
[I(Vr=5V), A]
Full Width
Half Max
(
D,
nm)
Dominant
Wavelength
Radiant Flux
Optical Rise
Time
(
, ns)
Typ
Max
Max
Typ
Typ
C460MB290-S0100-Plus
3.5
3.8
10
26
See Bin Table
See Bin Table
30
C470MB290-S0100-Plus
3.5
3.8
10
26
See Bin Table
See Bin Table
30
Mechanical Specifications
Note 4
Cxxx-MB290-S0100-Plus
Description Dimension
Tolerance
P-N Junction Area (m)
240 x 240
25
Top Area (m)
300 x 300
25
Bottom Area (m)
200 x 200
25
Chip Thickness (m)
250
25
Au Bond Pad Diameter (m)
114
20
Au Bond Pad Thickness (m)
1.2
0.5
Back Contact Metal Width (m)
19.8
-5, +10
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package with Hysol OS4000 epoxy for characterization. Seller
makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the
G SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction
temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds).
2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are
designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD.
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within
the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and
are provided for information only. Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1
3/4 packages with Hysol OS4000 epoxy. Optical characteristics were measured in a Photoresearch Spectrascan Integrating Sphere. Illuminance E.
4)
All Products conform to the listed mechanical specifications within the tolerances shown.
5)
Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80
m.
CPR3BS Rev. -
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
MegaBright
PlusTM LEDs
Cxxx-MB290-S0100-Plus
Standard Bins for Cxxx-MB290-S0100-Plus:
LED chips are sorted to the radiant flux and dominant wavelength bins. A sorted die sheet contains die from only one bin. Sorted
die kit (Cxxx-MB290-S0100-Plus) orders may be filled with any or all bins (Cxxx-MB290-01xx) contained in the kit.
12.0mW
12.0mW
475nm
C470MB290-0109
C460MB290-S0100-Plus
C470MB290-S0100-Plus
C470MB290-0107
C470MB290-0108
465nm
470nm
472nm
Dominant Wavelength
Radi
ant
Fl
ux
Radi
ant
Fl
ux
460nm
C460MB290-0105
C460MB290-0106
465nm
455nm
Dominant Wavelength
CPR3BS Rev. -
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
MegaBright
PlusTM LEDs
Cxxx-MB290-S0100-Plus
Characteristic Curves:
These are representative measurements for blue MegaBright
products. Actual curves will vary slightly for the various radiant flux
and dominant wavelength bins.
Wavelength Shift vs Forward Current
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0
5
10
15
20
25
30
If (mA)
Sh
ift (n
m)
Forward Current vs Forward Voltage
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Vf (V)
If (
m
A)
Relative Intensity vs Peak Wavelength
Relative
Intensity
(%
)
W avelength (nm)
400
500
600
20
40
60
80
100
Relative Intensity vs Forward Current
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
0
5
10
15
20
25
30
If (mA)
%
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