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Электронный компонент: CRF-22010-101

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CRF-22010-001
CRF-22010-101
Cree, Inc. 2003
Specifications subject to change without notice
Rev 1.01 - April 2, 2003
http://www.cree.com/
10 W SiC RF Power MESFET
Features
Applications
12 dB Small Signal Gain
Class A, AB Amplifiers
10 W Minimum P
1dB
TDMA, EDGE, CDMA, and W-CDMA
48 V Operation
Broadband Amplifiers
High Breakdown Voltage
CATV Amplifiers
High Temperature Operation
MMDS
Up to 3 GHz Operation
High Efficiency
Description
Cree's CRF-22010 is a silicon carbide (SiC) RF power Metal-Semiconduc-
tor Field-Effect Transistor (MESFET). SiC has superior properties com-
pared to silicon or gallium arsenide, including higher breakdown voltage,
higher saturated electron drift velocity, and higher thermal conductivity.
SiC MESFETs offer greater power density and increased reliability com-
pared to Si and GaAs transistors.
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter
Symbol
Rating
Units
Drain-Source Voltage
V
DSS
120
VDC
Gate-Source Voltage
V
GS
-25, +3
VDC
Total Device Dissipation
P
D
62.5
W
Storage Temperature
T
STG
-40, 150
C
Operating Junction Temperature
T
J
250
C
Thermal Resistance, Junction to Case
R
qJC
3.6
C/W
Soldering Temperature
T
S
250
C
Angled lead = Gate
Non-angled lead = Drain
Case/Flange = Source
CASE STYLE 101
CRF-22010-101
CASE STYLE 001
CRF-22010-001
CRF-22010-001
CRF-22010-101
Cree, Inc. 2003
Specifications subject to change without notice
2
http://www.cree.com/
Notes:
1
Drain Efficiency = P
OUT
/P
DC
2
Power Added Efficiency (PAE) = (P
OUT
- P
IN
)/P
DC
Electrical Characteristics (T
C
= 25C)
Characteristic
Symbol
Min
Typ
Max
Units
Conditions
DC CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-12
-10
-
VDC
V
DS
= 10 V, I
D
= 0.5 mA
Gate Quiescent Voltage
V
GS(Q)
-
-6
-
VDC
V
DS
= 48 V, I
D
= 500 mA
Zero Gate Voltage Drain Current
I
DSS
1.1
1.5
1.8
A
V
DS
= 10 V, V
GS
= 0 V
Drain-Source Breakdown Voltage
V
(BR)DSS
100
110
120
VDC
V
GS
= -26 V, I
D
= 3 mA
Forward Transconductance
g
m
-
150
-
mS
V
DS
= 48 V, I
D
= 500 mA
Case Operating Temperature
T
C
-30
-
120
C
Screw Torque (101 Style Package)
T
0.33
-
0.37
ftlb
RF CHARACTERISTICS
Gain
G
SS
10
12
-
dB
V
DD
= 48 V, I
DQ
= 500 mA, f =
2000 MHz
Power Output at 1 dB Compression
P
1dB
10
12
-
W
V
DD
= 48 V, I
DQ
= 500 mA, f =
2000 MHz
Drain Efficiency
1, 2
h
40
45
-
%
V
DD
= 48 V, I
DQ
= 500 mA, f =
2000 MHz, P
OUT
= P
1dB
Intermodulation Distortion
IMD
3
-
-30
-
dBc
V
DD
= 48 V, I
DQ
= 500 mA, f
1
=
2000.0 MHz, f
2
= 2000.1 MHz,
P
OUT
= 10 W PEP
CRF-22010-001
CRF-22010-101
Specifications subject to change without notice
Cree, Inc. 2003
http://www.cree.com/
3
Typical Broadband Performance (T
C
= 25C, V
DS
= 48 V, I
DQ
= 500 mA)
CR22010 Single-Ended Broadband Amp; Untuned Prototype
0
2
4
6
8
10
12
14
16
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Frequency (GHz)
G
a
in (
d
B)
25
27
29
31
33
35
37
39
41
P1d
B
(d
B
m
)
Gain
P1dB
W-CDMA
3GPP Test Model 1
with 16 DPCH
CR22010 Balanced Broadband Amp
Vds=48V, Idq=500mA/Device; Untuned Prototype
2
4
6
8
10
12
14
16
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
Frequency (GHz)
G
a
in (
d
B)
30
32
34
36
38
40
42
44
P1d
B
(d
B
m
)
Gain
P1dBm
W-CDMA
3GPP Test Model 1
with 16 DPCH
CRF-22010-001
CRF-22010-101
Cree, Inc. 2003
Specifications subject to change without notice
4
http://www.cree.com/
Typical Broadband Performance (T
C
= 25C, V
DS
= 48 V, I
DQ
= 500 mA)
CR22010 Single-Ended Broadband Amp
Vds=48V and 28V, Idq=500mA; Untuned Prototype
7
8
9
10
11
12
13
14
1.8
1.9
2.0
2.1
2.2
Frequency (GHz)
G
a
in (
d
B)
37
38
39
40
41
42
43
44
P1d
B
(d
B
m
)
48V Gain
28V Gain
48V P1dB
28V P1dB
CR22010 Single-Ended and Balanced Amp |S11|; Untuned Prototype
-35
-30
-25
-20
-15
-10
-5
0
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
Frequency (GHz)
|S11| (d
B)
Single-Ended
Balanced
CRF-22010-001
CRF-22010-101
Specifications subject to change without notice
Cree, Inc. 2003
http://www.cree.com/
5
Typical Scattering Parameters (Small Signal Class A, V
DS
=48 V, I
DQ
= 500 mA, ang in deg)
freq
100.0MHz
200.0MHz
300.0MHz
400.0MHz
500.0MHz
600.0MHz
700.0MHz
800.0MHz
900.0MHz
1.000GHz
1.100GHz
1.200GHz
1.300GHz
1.400GHz
1.500GHz
1.600GHz
1.700GHz
1.800GHz
1.900GHz
2.000GHz
2.100GHz
2.200GHz
2.300GHz
2.400GHz
2.500GHz
2.600GHz
2.700GHz
2.800GHz
2.900GHz
3.000GHz
3.100GHz
3.200GHz
3.300GHz
3.400GHz
3.500GHz
3.600GHz
3.700GHz
3.800GHz
3.900GHz
4.000GHz
S(1,1)
0.992 / -24.815
0.972 / -47.553
0.948 / -67.048
0.925 / -83.140
0.907 / -96.226
0.893 / -106.865
0.882 / -115.585
0.874 / -122.815
0.868 / -128.889
0.864 / -134.057
0.860 / -138.512
0.858 / -142.398
0.856 / -145.826
0.854 / -148.880
0.853 / -151.628
0.852 / -154.123
0.852 / -156.406
0.852 / -158.512
0.852 / -160.468
0.852 / -162.297
0.852 / -164.018
0.852 / -165.647
0.853 / -167.196
0.853 / -168.678
0.853 / -170.102
0.854 / -171.477
0.854 / -172.809
0.855 / -174.106
0.855 / -175.372
0.856 / -176.613
0.856 / -177.833
0.857 / -179.037
0.857 / 179.772
0.857 / 178.591
0.858 / 177.416
0.858 / 176.245
0.858 / 175.074
0.859 / 173.902
0.859 / 172.726
0.859 / 171.543
S(1,2)
0.022 / 75.220
0.041 / 61.737
0.056 / 50.220
0.066 / 40.689
0.074 / 32.845
0.079 / 26.326
0.082 / 20.818
0.085 / 16.078
0.087 / 11.925
0.088 / 8.226
0.089 / 4.884
0.090 / 1.826
0.091 / -1.003
0.091 / -3.644
0.091 / -6.129
0.092 / -8.483
0.092 / -10.726
0.092 / -12.874
0.092 / -14.939
0.092 / -16.932
0.092 / -18.863
0.092 / -20.737
0.092 / -22.562
0.092 / -24.342
0.092 / -26.083
0.092 / -27.787
0.092 / -29.460
0.092 / -31.103
0.091 / -32.720
0.091 / -34.313
0.091 / -35.884
0.091 / -37.437
0.091 / -38.972
0.091 / -40.492
0.091 / -41.999
0.091 / -43.494
0.091 / -44.979
0.091 / -46.456
0.092 / -47.927
0.092 / -49.393
S(2,1)
8.534 / 164.613
7.928 / 150.522
7.153 / 138.396
6.372 / 128.258
5.664 / 119.807
5.053 / 112.682
4.535 / 106.568
4.099 / 101.223
3.730 / 96.466
3.416 / 92.163
3.148 / 88.219
2.916 / 84.559
2.714 / 81.130
2.538 / 77.890
2.383 / 74.807
2.245 / 71.857
2.122 / 69.019
2.011 / 66.278
1.912 / 63.621
1.822 / 61.038
1.741 / 58.520
1.667 / 56.060
1.599 / 53.651
1.537 / 51.289
1.480 / 48.968
1.427 / 46.686
1.379 / 44.439
1.334 / 42.223
1.293 / 40.035
1.255 / 37.874
1.219 / 35.738
1.186 / 33.622
1.155 / 31.527
1.127 / 29.450
1.100 / 27.389
1.075 / 25.342
1.052 / 23.309
1.031 / 21.286
1.011 / 19.273
0.993 / 17.267
S(2,2)
0.222 / -38.721
0.260 / -68.263
0.299 / -88.841
0.332 / -103.288
0.357 / -113.709
0.376 / -121.434
0.391 / -127.302
0.403 / -131.859
0.413 / -135.472
0.423 / -138.389
0.431 / -140.787
0.439 / -142.792
0.447 / -144.496
0.454 / -145.970
0.461 / -147.264
0.468 / -148.418
0.475 / -149.464
0.482 / -150.425
0.489 / -151.320
0.495 / -152.164
0.502 / -152.968
0.509 / -153.743
0.515 / -154.496
0.521 / -155.233
0.528 / -155.958
0.534 / -156.675
0.540 / -157.389
0.546 / -158.100
0.552 / -158.811
0.557 / -159.525
0.563 / -160.241
0.568 / -160.962
0.573 / -161.688
0.578 / -162.421
0.583 / -163.160
0.588 / -163.906
0.592 / -164.661
0.597 / -165.424
0.601 / -166.196
0.605 / -166.977
CRF-22010-001
CRF-22010-101
Cree, Inc. 2003
Specifications subject to change without notice
6
http://www.cree.com/
10 W Class A Impedance Data, V
DS
= 48 V, I
DQ
= 500 mA, 101 Style Package
Frequency
Z
s
(ohms)
Z
l
(ohms)
MHz
R
jX
R
jX
1805
4.0
-0.5
14
8.7
1990
3.8
-3.0
13
9.0
2170
3.1
-5.4
11
6.0
Z
l
Z
s
Z
s
- Input match from gate
Z
l
- Output match from drain
Z
l
Z
s
CRF-22010-001
CRF-22010-101
Specifications subject to change without notice
Cree, Inc. 2003
http://www.cree.com/
7
All products conform to the listed mechanical specifications within the tolerances shown.
PACKAGE DIMENSIONS (UNITS IN INCHES)
STYLE 001
STYLE 101
.050 .005
.050 .005
.160 .005
1
2
.006
.320 .005
.080 .005
.080 .005
.070 .005
.004
3
.020 .005
.075 .005
.040 .005
.200 .005
Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source
.050 .005
.050 .005
.375 .005
.100 .005
.017 .005
1
2
.020 .005
.075 .005
.040 .005
.200 .005
.550 .005
.006
.320 .005
.080 .005
.080 .005
.070 .005
.004
.160 .005
3
Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source
CRF-22010-001
CRF-22010-101
Cree, Inc. 2003
Specifications subject to change without notice
8
http://www.cree.com/
Disclaimer: Specifications are subject to change without notice. Cree, Inc. believes the information contained
within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for
any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and
do vary in different applications, and actual performance can vary over time. All operating parameters should be
validated by customer's technical experts for each application. Cree products are not designed, intended, or
authorized for use as components in applications intended for surgical implant into the body or to support or sus-
tain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applica-
tions for the planning, construction, maintenance or direct operation of a nuclear facility. CREE is a trademark of
Cree, Inc.
Contact Information:
Cree Microwave, Inc.
160 Gibraltar Court
Sunnyvale, CA 94089-1319
Sheryle Henson (Cree Microwave--Marketing Manager) 408-962-7783
Tom Dekker (Cree Microwave--Sales Director) 919-313-5639
Web: http://www.cree.com/