Page 1 of 8 Specifications subject to change without notice UGF09060 Rev.2
http://cree.com/
UGF09060
Designed for industrial and commercial large signal amplifier applications in the frequency band
869-894MHz. Rated with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM,
Single and Multi-Carrier Power Amplifiers in Class A and AB operation.
60W, 869-894MHz, 27V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
ALL GOLD metal system for highest reliability.
Industry standard package.
Suggested alternative to the MRF9060.
Integrated ESD Protection.
High gain, high efficiency and high linearity.
Excellent thermal stability.
Maximum gain and insertion phase flatness.
Output load VSWR tolerance 10:1 all phase angles at 27V
DC
,
869MHz, 60W (CW) output power.
Common source.
Typical CDMA Performance
V
DD
= 27V, I
DQ
= 700mA at 881MHz IS-97 CDMA, Pilot, Sync,
Paging, Traffic Codes 8 through 13. Adjacent Channel Power Ratio
(ACPR) measured over 1.23MHz BW relative to offset frequency at
750kHz and 1.98MHz. Peak/Avg. = 9.8dB @ 0.01% probability on
CCDF.
Output Power
10 Watts Average
Power Gain
17.9 dB
Drain Efficiency
23%
ACPR
750kHz offset: -50dBc @ 30kHz BW
1.98MHz offset: -65dBc @ 30kHz BW
Typical EDGE Performance
V
DD
= 27V, I
DQ
= 400mA at 881MHz
Output Power
25 Watts Average
Power Gain
16.3 dB
Drain Efficiency
34.6%
ACPR
- 64.3 (30kHz BW offset
400kHz
normalized to total power in a 30kHz BW)
ACPR
- 76.5 (30kHz BW offset
600kHz
normalized to total power in a 30kHz BW)
Package Type 440095
PN: UGF09060F
Package Type 440134
PN: UGF09060P
Page 2 of 8 Specifications subject to change without notice UGF09060 Rev.2
http://cree.com/
UGF09060
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, Gate connected to Source
V
DSS
65
Volts
Gate to Source Voltage
V
GSS
+15 to 0.5
Volts
Total Device Dissipation @ Tcase = 25
o
C
Derate above 25
o
C
P
D
116.6
0.67
Watts
W/
o
C
Storage Temperature Range
T
stg
-65 to +150
o
C
Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristic Symbol
Typical
Unit
Thermal Resistance, Junction to Case
JC
1.5
o
C/W
Electrical DC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(V
GS
=0, I
D
=5mA)
BV
DSS
65 73 -
V
DC
Drain to Source Leakage current
(V
DS
=28V, V
GS
=0)
I
DSS
- -
1.0
A
DC
Gate to Source Leakage current
(V
GS
=15V, V
DS
=0)
I
GSS
- -
1.0
A
DC
Gate Threshold Voltage
(V
DS
=V
GS
, I
D
=1mA)
V
GS(th)
2.4 3.2
3.75
V
DC
Gate Quiescent Voltage
(V
DS
=27 V, I
D
=400mA)
V
GS(Q)
3.0 4.0
6.0
V
DC
Drain to Source On Voltage
(V
GS
=10V, I
D
=1A)
V
DS(on)
- 0.15
0.17
V
DC
Forward Transconductance
(V
DS
=10 V
DC
, I
D
=1A)
Gm 1.0 - -
S
Page 3 of 8 Specifications subject to change without notice UGF09060 Rev.2
http://cree.com/
UGF09060
AC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input Capacitance
(V
DS
=27V, V
GS
=0V, f = 1MHz)
C
ISS
- 90 -
pF
Output capacitance
(V
DS
= 27V, V
GS
=0V, f = 1MHz)
C
OSS
- 54 -
pF
Feedback capacitance
(V
DS
=27V, V
GS
=0V, f = 1MHz)
C
RSS
- 2.7 -
pF
RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol
Min
Typ
Max
Unit
Power Gain, P
out
=20W, CW (43 dBm)
V
DD
=27V, I
DQ
=400mA
Freq = 869 MHz and 894 MHz.
G
L
15 17
18.5
dB
Power Gain, P
out
=60W, CW (47.8 dBm)
V
DD
=27V, I
DQ
=400mA
Freq = 869 MHz and 894 MHz.
G
P
14 16 17.5
dB
Drain Current, P
out
= 60W, CW (47.8 dBm)
V
DD
=27V, I
DQ
=400mA,
Freq = 869 MHz and 894 MHz.
I
D
- - 5.0
A
Two-Tone Common-Source Amplifier Power Gain
V
DD
=27V, I
DQ
=400mA, P
out
= 60 W PEP
Freq = 869 MHz and 894 MHz,
Tone Spacing = 100kHz
G
TT
15 16.8 -
dB
Two-Tone Third Order Intermodulation Distortion
V
DD
=27V, I
DQ
=400mA, P
out
= 60 W PEP
Freq = 869 MHz and 894 MHz,
Tone Spacing = 100kHz
I
MD3
- -34
-29
dBc
Two-Tone Drain Efficiency
V
DD
=27V, I
DQ
=400mA, P
out
= 60 W PEP
Freq = 869 MHz and 894 MHz,
Tone Spacing = 100kHz
D2
- 41
34
%
Drain Current
P
out
= 60W, PEP, V
DD
=27V, I
DQ
=400mA,
Freq = 869 MHz and 894 MHz,
Tone Spacing = 100kHz
I
D2
- 2.7
3.25
A
Input Return Loss
V
DD
=27V, P
out
= 60 W PEP, I
DQ
=400mA
Freq = 869 MHz and 894 MHz,
Tone Spacing = 100kHz
IRL - -11 -
dB
Load Mismatch Tolerance
V
DD
=27V, I
DQ
= 400 mA, P
out
=60W (CW),
F = 869MHz @ all phase angles
VSWR* 10:1
-
-
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 4 of 8 Specifications subject to change without notice UGF09060 Rev.2
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UGF09060
Power Gain, Efficiency vs Output Power
0
2
4
6
8
10
12
14
16
18
20
10
20
30
40
50
60
70
Output Power (Watts) Avg.
Pin (Watts), Power Gain (dB)
0
10
20
30
40
50
60
70
Drain Efficiency (%)
PIn(w)
Gp(dB)
EFF(%)
V
DD
=27V
DC
I
DQ
=400mA
Freq=894MHz.
CDMA- Power Gain, Drain Efficiency, ACPR vs Output Power
0
5
10
15
20
25
30
2
6
10
14
Pout,Output Power (Watts) Avg, CDMA
Drain Efficiency (%),
Gps, Power Gain (dB)
-80
-70
-60
-50
-40
-30
-20
-10
0
ACPR (1 & 2) (dBc)
Gp(dB)
EFF(%, Avg)
ACPR1(dBc)
ACPR2(dBc)
V
DD
=27V
DC
, I
DQ
=700mA
Freq=881MHz.
1.23MHz Channel B W
offset 750kHz, 1.98MHz.
Page 5 of 8 Specifications subject to change without notice UGF09060 Rev.2
http://cree.com/
UGF09060
Intermodulation Distortion Products, Drain Efficiency vs Output Power
0
5
10
15
20
25
30
35
40
45
50
5
10
15
20
25
30
Pout, Output Power (Watts) PEP
D
r
ai
n Effi
ci
ency (%),
Gps
-70
-60
-50
-40
-30
-20
-10
0
IMD, Intermodulation Distortion (dBc)
Gp(dB)
EFF(%, Avg)
3th Low
5th Low
7th Low
V
DD
=27V
DC
, I
DQ
=400mA
Freq=894MHz, Two-Tone
100Khz Tone Spacing
EDGE- Power Gain, Drain Efficiency, ACPR vs Output Power
5
10
15
20
25
30
35
40
5
10
15
20
25
30
Pout,Output Power (watts) Avg.
Efficiency (%),Gp (dB)
-100
-90
-80
-70
-60
-50
-40
-30
ACPR1(400kHz), ACPR2(600kHz)
Gp(dB)
EFF(%, Avg)
ACP1(dB)
ACP2(dB)
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