UGF21090 Rev. 1
UGF21090
Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170
MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers
in class AB operation for PCN and PCS / Cellular radio applications.
Internally matched for repeatable manufacturing.
ALL GOLD metal system for highest reliability.
Suggested alternative to the MRF21090/MRF21090S.
Integrated ESD protection.
High gain, high efficiency and high linearity.
Industry standard package.
Maximum gain and insertion phase flatness.
Capable of handling 10:1 VSWR, @ 28 Vdc, 2100 MHz,
90W (CW) Output Power.
Excellent thermal stability.
Package Type 440174
PN: UGF21090F
Package Type 440175
PN: UGF21090P
Typical 2-Carrier W-CDMA Performance
f1 = 2135MHz, f2 = 2145MHz
Average Output Power = 20 W
Efficiency = 22.3%
Power Gain = 13.2 dB
IM3 = -32.5 dBc (3.84 MHz BW @ f1-10MHz and f2+10MHz)
ACPR = -38.7dBc (3.84 MHz BW @ f1-5MHz and f2+5MHz)
V
DD
= 28V
I
DQ
= 1000mA
Peak/Avg. = 10.4dB @ 0.01% Probability on CCDF
90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
UGF21090 Rev. 1
UGF21090
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage
V
DSS
65 Volts
Gate to Source Voltage
V
GSS
+15
/-0.5 Volts
Total Device Dissipation @ Tcase = 25
o
C
Derate above 25
o
C
P
D
195
1.10
Watts
W/
o
C
Storage Temperature Range
T
STG
-60 to +150
o
C
Maximum JunctionTemperature
T
J
200
o
C
Thermal Characteristics
Characteristics Symbol
Max
Unit
Thermal Resistance, Junction to Case, is a maximum of
jc
0.90
o
C/W
Electrical DC Characteristics
(Tc=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(V
GS
=0V
DC
, I
D
=5mA)
BV
DSS
65 73
-
Volts
Drain to Source Leakage Current
(V
DS
=28V
DC
, V
GS
=0 V
DC
)
I
DSS
- -
1.0
A
Gate to Source Leakage Current, Forward
(V
GS
=15V
DC
, V
DS
=0 V
DC
)
I
GSSF
- -
1.0
A
Threshold Voltage
(V
DS
= V
GS
, I
D
=20mA)
V
GS(th)
2.7 3.6
5.0
Volts
Gate Quiescent Voltage
(V
DS
=28 V
DC
, I
D
=750mA)
V
GS(Q)
3.0 3.6
4.5
Volts
Drain to Source On Voltage
(V
GS
=10 V
DC
, I
D
=1A
V
DS(on)
-
0.085
0.13
Volts
Forward Transconductance
(V
DS
=10 V
DC
, I
D
=1.0A)
Gm 1.0 -
-
S
Notes (unless otherwise specified):
1. All tests are at 25
C.
AC Characteristics
(Tc=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input capacitance *
(V
DS
=28V, V
GS
=0V, f = 1MHz)
C
ISS
- 290 -
pF
Output capacitance
(V
DS
=28V, V
GS
=0V, f = 1MHz)
C
OSS
- TBD -
pF
Feedback capacitance *
(V
DS
=28V, V
GS
=0V, f = 1MHz)
C
RSS
-
3.7
- pF
* Part is internally matched.
UGF21090 Rev. 1
UGF21090
RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol
Min
Typ
Max
Unit
Power Gain, P
OUT
=90W, CW (49.54dBm)
V
DD
=28V, I
DQ
=750mA
F= 2110MHz and 2170 MHz
G
P
10.5
12
15
dB
Power Gain, P
OUT
=40W, CW (46.0dBm)
V
DD
=28V, I
DQ
=750mA
F= 2110 MHz and 2170 MHz
G
L
11.5
13
15
dB
Drain Current, P
OUT
=90W, CW( 49.54dBm)
V
DD
=28V, I
DQ
=750mA
F= 2110 MHz and 2170 MHz
I
D
-
7.50
8.95
A
Two-Tone Drain Efficiency
V
DD
=28V, I
DQ
=750mA, P
OUT
= 90W PEP
F=2110 and 2170 MHz, Tone Spacing =100kHz
D
30 34 -
%
Two-Tone Common-Source Amplifier Power Gain
V
DD
=28V, I
DQ
=750mA, P
OUT
= 90W PEP
F=2110 and 2170 MHz,Tone Spacing =100kHz
G
TT
11.2
12.5
-
dB
Two-Tone Third Order Intermodulation Distortion
V
DD
=28V, I
DQ
=750mA, P
OUT
= 90W PEP
F=2110 MHz and 2170MHz,Tone Spacing=100kHz
IMD3
-
-30 -27.5
dBc
Two Tone Drain Current, P
OUT
= 90W PEP
F=2170 MHz and 2170MHz,Tone Spacing=100kHz
I
MD3
-
4.8
5.5
A
Input Return Loss
V
DD
=28V, I
DQ
=750mA, P
OUT
= 90W PEP
F= 2110MHz and 2170 MHz,Tone Spacing=100kHz
IRL -
-13.5
-9.0
dB
Load Mismatch Tolerance*
V
DD
=28V, I
DQ
=750mA, P
OUT
=90W(CW)49.5dBm
f=2110MHz @ all phase angles
VSWR 10:1 - -
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in Output power before and after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
UGF21090 Rev. 1
Power Gain, Efficiency vs Output Power
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
70
80
90
100
Output Power (Watts) CW Avg
Pin (Watts), Power Gain (dB)
0
5
10
15
20
25
30
35
40
45
50
Drain Efficiency (%)
PIn(W)
Gp(dB)
EFF(%)
V
DD
=28V
DC
I
DQ
=750mA
Freq=2140MHz
UGF21090
Intermodulation Distortion Products, Drain Efficiency vs Output Power
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
90
100
Pout, Output Power (Watts) PEP
Drain Efficiency (%), Gps
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
IMD, Intermodulation Distortion (dBc)
Gp(dB)
EFF(%, Avg)
3rd LowIMD(dBc)
5th LowIMD(dBc)
7th LowIMD(dBc)
V
DD
=28V
DC
, I
DQ
=750mA
Freq=2140MHz, 2-Tone
100KHz Tone Spacing
UGF21090 Rev. 1
Two Carriers N-CDMA
IM3, Power Gain, Drain Efficiency, ACPR vs Output Power
0
5
10
15
20
25
0
5
10
15
20
Pout,Output Power (Watts) Avg, N-Band CDMA
Drai
n E
ffi
ci
ency (%),
Gp
s
,
Po
we
r Ga
in
(d
B)
-70
-60
-50
-40
-30
-20
-10
0
ACPR (dBc), IM3 (dBc)
Gp(dB)
EFF(%, Avg)
UpACPR(dBc)
UpIM3(dBc)
V
DD
=28V
DC
, I
DQ
=1A
Freq=2140MHz
1.23MHz Channel B W
2.5MHz Space
UGF21090
Two Carriers W-CDMA
IM3, Power Gain, Drain Efficiency, ACPR vs Output Power
0
5
10
15
20
25
30
0
5
10
15
20
25
Pout, Output Power (Watts) Avg, Wide-Band CDMA
Drain Efficiency (%),
Gps, Power Gain (dB)
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
ACPR (dBc), IM3 (dBc)
Gp(dB)
EFF(%, Avg)
UpACPR(dBc)
UpIM3(dBc)
V
DD
=28V
DC
, I
DQ
=1A
Freq=2140MHz
3.84MHz Channel B W
10MHz Space Heading
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