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Электронный компонент: UGF27025F

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Page 1 of 7
UGF27025 Rev. 1
Specifications subject to change without notice
http://www.cree.com/
UGF27025
Designed for base station applications in the frequency band 2.5 to 2.7 GHz. Rated with a
minimum output power of 25W, it is ideal for CW and Multi-Tone Amplifiers in Class AB operation.
25W, 2.7 GHz, 28V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
ALL GOLD metal system for highest reliability
Industry standard package
Internally matched for repeatable manufacturing
High gain, high efficiency and high linearity
Integrated ESD Protection.
Maximum gain and insertion phase flatness.
Output load VSWR tolerance 10:1 all phase angles at
28V
DC
, 2500MHz, 25W (CW) output power.
Common source.
Application Specific Performance, 2.7 GHz
Typical 2-Tone Performance
Average Load Power 12.5 W
D
30%
Power Gain 11.5 dB
IMD3: -30dBc @ -100kHz/ +100KHz
VDD 28V
IDQ 330mA
Typical CW Performance
Average Load Power 25 W
D
38%
Power Gain 11.0 dB
VDD 28V
IDQ 330mA
Package Type 440159
PN: UGF27025F
Page 2 of 7
UGF27025 Rev. 1
Specifications subject to change without notice
http://www.cree.com/
UGF27025
Maximum Ratings
Rating
Symbol
Value
Unit
Drain to Source Voltage, Gate connected to Source
V
DSS
65
Volts
Gate to Source Voltage
V
GSS
+15 to -0.5
Volts
Total Device Dissipation @ Tcase = 70
o
C
Derate above 70
o
C
P
D
83.5
0.48
Watts
W/
o
C
Storage Temperature Range
T
stg
-65 to +150
o
C
Maximum Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristic
Symbol
Typical
Unit
Thermal Resistance, Junction to Case
JC
2.1
o
C/W
Electrical DC Characteristics
(Tc=25
C unless otherwise specified)
Rating
Symbol
Min
Typ
Max Unit
Drain to Source Breakdown Voltage
(V
GS
=0, I
D
=1mA)
BV
DSS
65
-
-
Volts
Drain to Source Leakage current
(V
DS
=28V, V
GS
=0)
I
DSS
-
-
1.0
mA
Gate to Source Leakage current
(V
GS
=15V, V
DS
=0)
I
GSS
-
-
1.0
A
Threshold Voltage
(V
DS
=10V, I
D
=1mA)
V
GS(th)
-
3.5
-
Volts
Gate Quiescent Voltage
(V
DS
=28 V, I
D
=330mA)
V
GS(Q)
3.0
4.0
5.0
Volts
Drain to Source On Voltage
(V
GS
=10V, I
D
=1A)
V
DS(on)
-
-
0.33 Volts
Forward Transconductance
(V
DS
=10V, I
D
=1A)
Gm
1.0
-
-
S
Page 3 of 7
UGF27025 Rev. 1
Specifications subject to change without notice
http://www.cree.com/
UGF27025
AC Characteristics
(Tc=25
C unless otherwise specified)
Rating
Symbol
Min
Typ
Max Unit
Input capacitance * (including matching capacitor)
(V
DS
=28V, V
GS
=0V, f = 1MHz)
C
ISS
-
74
-
pF
Output capacitance * (including matching capacitor)
(V
DS
= 28V, V
GS
=0V, f = 1MHz)
C
OSS
-
352
-
pF
Feedback capacitance *
(V
DS
=28V, V
GS
=0V, f = 1MHz)
C
RSS
-
1.6
-
pF
* Part is internally matched on input and output.
RF and Functional Tests
(In Cree Microwave Broadband Fixture, Tc=25
C unless otherwise specified
)
Rating
Symbol
Min
Typ
Max Unit
CW Low Power Gain, Pout=8W
V
DD
=28V, I
DQ
=330mA, f=2700 MHz
G
L
11
12
-
dB
CW Power Gain, P
out
= 25 W
V
DD
=28V, I
DQ
=330mA, f=2700 MHz
G
P
10
11
-
dB
CW Drain Efficiency, P
out
= 25 W,
f=2700 MHz, V
DD
=28V, I
DQ
=330mA
D
34
38
-
%
Two-Tone Common-Source Amplifier Power Gain
V
DD
=28V, I
DQ
=330mA, P
out
= 25 W PEP
f
1
=2700 MHz and f
2
=2700.1 MHz
G
TT
10.5
11.5
-
dB
Two-Tone Intermodulation Distortion
V
DD
=28V, I
DQ
=330mA, P
out
= 25 W PEP
f
1
=2700 MHz and f
2
=2700.1 MHz
I
MD
-
-30
-28
dBc
Two-Tone Drain Efficiency
V
DD
=28V, I
DQ
=330mA, P
out
= 25 W PEP
f
1
=2700 MHz and f
2
=2700.1 MHz
D2
26
30
-
%
Input Return Loss
V
DD
=28V, P
out
= 25 W PEP, I
DQ
=330mA
f
1
=2500 MHz and 2700 MHz, Tone Spacing =
100kHz
IRL
-
-
-9
dB
Load Mismatch Tolerance
V
DS
=28V, I
DQ
= 330 mA, Pout=25W, f=2500 MHz
VSWR
10:1
-
-
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 4 of 7
UGF27025 Rev. 1
Specifications subject to change without notice
http://www.cree.com/
UGF27025
CW Power Gain and Efficiency Vs Power Output
10
11
12
13
6.4
8.0
10.1
12.7
15.9
20.2
25.3
31.9
Pout (W)
G
p
(
d
B
)
15
20
25
30
35
40
45
E
f
f
(
%
)
Gp(dB)
EFF(%)
Test Conditions:
Freq=2700MHz, V
DD
=28V,
I
DQ
=330mA, Temp=25 C
Intermodulation Distortion & Efficiency Vs Power Output
-90
-80
-70
-60
-50
-40
-30
-20
1.0 1.3 1.6 2.0 2.5 3.2 4.0 5.1 6.4 8.0 10.1 12.6 16.0
Pout, 2-Tone (W,Avg)
I
M
D

(
d
B
c
)
0
10
20
30
40
D
r
a
i
n

E
f
f
i
c
i
e
n
c
y

(
%
)
3rd UpIMD(dBc)
5th UpIMD(dBc)
7th UpIMD(dBc)
9th UpIMD(dBc)
EFF(%, Avg)
Test Conditions:
Freq1=2700MHz, Freq2=2700.1MHz,
Vdd=28V, Idq=330mA, Temp=25 C
Page 5 of 7
UGF27025 Rev. 1
Specifications subject to change without notice
http://www.cree.com/
UGF27025
Test Fixture
Test Fixture Layout for 2.5-2.7GHz
Test Fixture Schematic