UPF21010
10W, 2.17 GHz, 28V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
Designed for UMTS base station applications in the frequency band 2110 to 2170 MHz.
Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, and Multi-
Carrier Power Amplifiers in Class A or AB operation.
ALL GOLD metal system for highest reliability.
Industry standard package.
Internally matched for repeatable manufacturing.
High gain, high efficiency and high linearity.
Application Specific Performance, 2.14 GHz
GSM:
10 Watts
13 dB
EDGE:
5
Watts
13
dB
IS95 CDMA:
3 Watts
13 dB
W-CDMA:
1.8 Watts
13 dB
Package Type 440095
PN: UPF21010F
Typical W-CMDA Performance: 2140 MHz, 28 Volts
5 MHz & 10 MHz Offset 64 DPCH
Output Power 1.8W
Drain Efficiency 21%
Power Gain 13 dB
Package Type 440134
PN: UPF21010P
Page 1 of 6
UPF21010 Rev. 3
UPF21010
Maximum Ratings
Rating Symbol
Value
Unit
Drain to Source Voltage, gate connected to source
BV
DSS
65 Volts
Gate to Source Voltage
BV
GSS
+15
/-5 Volts
Total Device Dissipation @ TC = 70
o
C
Derate above 70
o
C
P
D
32
0.24
Watts
W/
o
C
Storage Temperature Range
T
STG
-65 to +150
o
C
Operating Junction Temperature
T
J
200
o
C
Thermal Characteristics
Characteristics Symbol
Typical
Unit
Thermal Resistance, Junction to Case
jc
4.0
o
C/W
Electrical DC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Drain to Source Breakdown Voltage
(V
GS
= 0, I
DS
= 1mA)
BV
DSS
65 - -
Volts
Drain to Source Leakage current
(V
DS
= 28V, V
GS
= 0)
I
DSS
- -
100
A
Gate to Source Leakage current
(V
GS
= 15V, V
DS
= 0)
I
GSS
- -
1.0
A
Threshold Voltage
(V
DS
= 10V, I
DS
= 1mA)
V
TH
-
3.5
-
Volts
Gate Quiescent Voltage
(V
DS
= 26 V, I
DS
= 85mA)
V
GS
(on) 3.0 4.0
5.0
Volts
Drain to Source On Voltage
(V
GS
= 10V, I
DS
= 1A
V
DS
(on) - 0.9
-
Volts
Forward Transconductance
(V
DS
= 10V, I
D
= 5A)
G
M
-
0.5 - S
Page 2 of 6
UPF21010 Rev. 3
UPF21010
AC Characteristics
(T
C
=25
C unless otherwise specified)
Rating Symbol
Min
Typ
Max
Unit
Input Capacitance
(V
DS
=26V, V
GS
=0V, freq= 1MHz)
C
ISS
-
12.4
-
pF
Output capacitance
(V
DS
= 26V, V
GS
=0V, freq= 1MHz)
C
OSS
- 8.5
-
pF
Feedback capacitance
(V
DS
=26V, V
GS
=0V, freq= 1MHz
C
RSS
-
0.6
-
pF
RF and Functional Tests
(Tc=25
C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating Symbol
Min
Typ
Max
Unit
Linear Power Gain, Single Tone
(V
DS
=26V, I
DQ
=85mA, P
OUT
=3W, f=2140 MHz)
G
plin
12.0
13.5
-
dB
Compressed Power Gain, Single Tone
(V
DS
=26V, I
DQ
=85mA, P
OUT
=10W, f=2140 MHz)
G
PS
11.0
12.5
-
dB
Drain Efficiency, WCDMA, 64DPCH
(V
DS
=26V, I
DQ
=85mA, P
AVG
=1.8W, f=2140 MHz)
h
- 21
-
%
Intermodulation Distortion, Two Tone
(V
DS
=26V, I
DQ
=85mA, P
OUT
=10W PEP
f1=2140 MHz, f2=2140.1MHz)
IMD -
-33
-30
dBc
Load Mismatch Tolerance
(V
DS
=26V, I
DQ
=85mA, P
OUT
=10W, f=2140 MHz)
VSWR* 10:1 - -
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 3 of 6
UPF21010 Rev. 3
UPF21010
UPF21010, WCDMA Efficiency
0
5
10
15
20
25
30
24
26
28
30
32
34
Pout Avg. (dBm)
Efficiency (%)
UPF21010 EDGE: Gt and EVM
0
2
4
6
8
10
12
14
23
25
27
29
31
33
35
37
39
Pout Avg.(dBm)
Gain/EVM
Gt(dB)
EVM
Page 4 of 6
UPF21010 Rev. 3
UPF21010
UPF 21010, EDGE Efficiency
0
5
10
15
20
25
30
35
40
20
22
24
26
28
30
32
34
36
38
Pout Avg. (dBm)
Efficiency (%)
UPF21010, WCDMA-ACPR
-60
-58
-56
-54
-52
-50
-48
-46
-44
-42
-40
24
26
28
30
32
34
Pout Avg. (dBm)
ACPR
ACP-5MHz
ACP+5MHz
ACP-10MHz
ACP+10MHz
Page 5 of 6
UPF21010 Rev. 3
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