CYStech Electronics Corp.
Spec. No. : C321N3R
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTA1722N3
CYStek Product Specification
High Voltage PNP Epitaxial Planar Transistor
BTA1722N3
Features
High Breakdown Voltage:BVCEO-350V
Complementary to BTC4062N3
Symbol
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-350
V
Collector-Emitter Voltage
VCEO
-350
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current---continuous
IC
-500
mA
Power Dissipation @TA=25
Pd 225 mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
BTA1722N3
SOT-23
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C321N3R
Issued Date : 2003.04.12
Revised Date :
Page No. : 2/4
BTA1722N3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BVCBO -350 -
-
V IC=-100A
BVCEO -350 -
-
V IC=-1mA
BVEBO -5 -
-
V IE=-10A
ICBO - - -50 nA
VCB=-250V
IEBO - - -50 nA
VEB=-4V
VCE(sat) 1
-
-
-0.3
V
IC=-10mA, IB=-1mA
VCE(sat) 2
-
-
-0.35
V
IC=-20mA, IB=-2mA
*VCE(sat) 3
-
-
-0.5
V
IC=-30mA, IB=-3mA
*VCE(sat) 4
-
-
-1.0
V
IC=-50mA, IB=-5mA
VBE(sat) 1
-
-
-0.75
V
IC=-10mA, IB=-1mA
VBE(sat) 2
-
-
-0.85
V
IC=-20mA, IB=-2mA
*VBE(sat) 3
-
-
-0.9
V
IC=-30mA, IB=-3mA
VBE(on)
-
-
-2
V
VCE=-10V, IC=-100mA
hFE 1
20
-
-
-
VCE=-10V, IC=-1mA
hFE 2
30 - - -
VCE=-10V,IC=-10mA
*hFE 3
30 - 200 -
VCE=-10V,IC=-30mA
*hFE 4
20 - 200 -
VCE=-10V,IC=-50mA
*hFE
5
15 - - -
VCE=-10V,IC=-100mA
fT
40
-
200
MHz
VCE=-20V, IC=-10mA, f=20MHz
Cob - - 6 pF
VCB=-20V,
IE=0A,f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
CYStech Electronics Corp.
Spec. No. : C321N3R
Issued Date : 2003.04.12
Revised Date :
Page No. : 3/4
BTA1722N3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current---IC(mA)
Curr
HFE@VCE=10V
25
75
125
Saturation Voltage vs Collector Current
10
100
1000
10000
0.1
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
25
75
125
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
25
75
125
VCE(SAT)@IC=10IB
Power Derating Curve
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature --- Ta( )
Power Dissipation---PD(mW
)
CYStech Electronics Corp.
Spec. No. : C321N3R
Issued Date : 2003.04.12
Revised Date :
Page No. : 4/4
BTA1722N3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070
0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Base 2.Emitter 3.Collector
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
2Z
PDF 
ZIP