CYStech Electronics Corp.
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 1/4
BTB1182J3
CYStek Product Specification
Low Vcesat PNP Epitaxial Planar Transistor
BTB1182J3
Features
Low V
CE
(sat), V
CE
(sat)=-0.7 V (typical), at I
C
/ I
B
= -2A / -0.5A
Excellent current gain characteristics
Complementary to BTD1758J3
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current (DC)
I
C
-2
A
Collector Current (Pulse)
I
CP
-5
(Note)
A
Power Dissipation (T
C
=25)
Pd
10
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note
:
Single Pulse , Pw=10ms
BTB1182J3
TO-252
BBase
CCollector
EEmitter
B C E
CYStech Electronics Corp.
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 2/4
BTB1182J3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
-40 - - V
I
C
=-50A, I
E
=0
BV
CEO
-30 - - V
I
C
=-1mA, I
B
=0
BV
EBO
-5 - - V
I
E
=-50A, I
C
=0
I
CBO
- - -1
A
V
CB
=-20V, I
E
=0
I
EBO
- - -1
A
V
EB
=-4V, I
C
=0
*V
CE(sat)
- - -1 V
I
C
=-3A, I
B
=-0.1A
*h
FE
82 - 560 -
V
CE
=-3V, I
C
=-0.5A
f
T
-
100
-
MHz
V
CE
=-5V, I
C
=-0.1A, f=100MHz
Cob - 50
-
pF
V
CB
=-10V, f =1MHz
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
Classification Of hFE
Rank P Q R S
Range 82~180 120~270 180~390 270~560
CYStech Electronics Corp.
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 3/4
BTB1182J3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---HFE
VCE=1V
VCE=6V
VCE=3V
Saturation Voltage vs Collector Current
10
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
IC=10IB
IC=20IB
VCE(SAT)@IC=40IB
IC=40IB
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT )@IC=10IB
Power Derating Curve
0
2
4
6
8
10
12
0
50
100
150
200
Case Temperature---TC()
Power Dissipation---PD(W)
CYStech Electronics Corp.
Spec. No. : C812J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 4/4
BTB1182J3
CYStek Product Specification
TO-252 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.0177
0.0217 0.45 0.55 G 0.0866 0.1102 2.20 2.80
B 0.0650
0.0768
1.65 1.95 H - *0.0906 - *2.30
C
0.0354
0.0591
0.90 1.50 I - 0.0354 - 0.90
D
0.0177
0.0236
0.45 0.60 J - 0.0315 - 0.80
E 0.2520
0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2125
0.2283 5.40 5.80 L 0.0551 0.0630 1.40 1.60
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
B
A
C
E
H
I
J
K
3
2
1
D
F
G
L
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Marking:
B1182
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