CYStech Electronics Corp.
Spec. No. : C202S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 1/4
BTC4081S3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTC4081S3
Description
The BTC4081S3 is designed for using in driver stage of AF amplifier and general purpose
amplification.
Low Cob. Typ. Cob=2.0pF
Complementary to BTA1576S3
.
Equivalent Circuit
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
IC
150
mA
Power Dissipation
Pd
225
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
SOT-323
BTC4081S3
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C202S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 2/4
BTC4081S3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BVCBO 60 -
-
V IC=100uA
BVCEO 50 -
-
V IC=1mA
BVEBO 7 -
- V
IE=50uA
ICBO - - 0.1 uA
VCB=60V
IEBO - - 0.1 uA
VEB=7V
*VCE(sat) - 0.2 0.4 V IC=50mA,
IB=5mA
*hFE 120 - 820
VCE=6V,
IC=1mA
fT
80
180
-
MHz
VCE=12V, IC=2mA, f=100MHz
Cob - 2 3.5
pF
VCB=12V,
f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification Of hFE
Rank Q R S T
Range 120-270 180-390 270-560 410-820
CYStech Electronics Corp.
Spec. No. : C202S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 3/4
BTC4081S3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current--- IC(mA)
Current Gain---
HFE
HFE@VCE=6V
Saturation Voltage vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current--- IC(mA)
Saturation Voltage-(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current---IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=12V
PD - Ta
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature ---Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C202S3
Issued Date : 2002.05.11
Revised Date : 2002.11.26
Page No. : 4/4
BTC4081S3
CYStek Product Specification
SOT-323 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A
0.0315
0.0433
0.80
1.10
e1
0.0256 - 0.65 -
A1 0.0000 0.0039 0.00 0.10 He 0.0787 0.0886 2.00 2.25
bp 0.0118 0.0157 0.30 0.40 Lp 0.0059
0.0177 0.15 0.45
C 0.0039
0.0098 0.10 0.25 Q 0.0051 0.0091 0.13 0.23
D 0.0709
0.0866 1.80 2.20 v 0.0079 -
0.2
-
E 0.0453
0.0531 1.15 1.35 w 0.0079 -
0.2
-
e 0.0512 -
1.3
-
- -
10
0
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
He
E
A
A1
Q
Lp
e1
e
bp
1
2
3
D
W
B
v
A
Z
detail Z
A
C
0
1
2
scale
mm
Style: Pin 1.Base 2.Emitter 3.Collector
3-Lead SOT-323 Pastic
Surface Mounted Package
CYStek Package Code: S3
Marking:
TE
1F
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