CYStech Electronics Corp.
Spec. No. : C203S3
Issued Date : 2002.05.11
Revised Date : 2002.11.01
Page No. : 1/4
BTC4097S3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTC4097S3
Description
The BTC4097S3 is designed for use in driver stage of AF amplifier and general purpose
switching application.
High IC Max . IC Max = 0.6A
Low Vce(set) . TYP. Vce(set) = 0.2V at IC/IB = 500mA/50mA
Optimal for low Voltage operation
Complementary to BTA1577S3
.
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
0.6
A
Power Dissipation
Pd
225
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
BTC4097S3
SOT-323
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C203S3
Issued Date : 2002.05.11
Revised Date : 2002.11.01
Page No. : 2/4
BTC4097S3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BVCBO 60 -
-
V IC=100uA
BVCEO 40 -
-
V IC=1mA
BVEBO 6 -
- V
IE=10uA
ICBX - - 100
nA
VCE=35V,
VBE=-0.4V
*VCE(sat)1 -
-
0.4 V IC=150mA,
IB=15mA
*VCE(sat)2 -
0.2 0.75 V IC=500mA,
IB=50mA
*VBE(sat)1 -
- 0.95 V IC=150mA,
IB=15mA
*VBE(sat)2 -
-
1.2 V IC=500mA,
IB=50mA
*hFE1 20 - -
VCE=1V,
IC=0.1mA
*hFE2 40 - -
VCE=1V,
IC=1mA
*hFE3 80 - -
VCE=1V,
IC=10mA
*hFE4 82 - 390 VCE=1V,
IC=150mA
*hFE5 40 - -
VCE=2V,
IC=500mA
fT
250
-
-
MHz
VCE=10V, IC=20mA, f=100MHz
Cob - - 6.5
pF
VCB=5V,
f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification Of hFE4
Rank P Q R
Range 82~180 120~270
180~390
CYStech Electronics Corp.
Spec. No. : C203S3
Issued Date : 2002.05.11
Revised Date : 2002.11.01
Page No. : 3/4
BTC4097S3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current ---IC(mA)
Current Gain---
HFE
HFE@VCE=3V
Saturation Voltage vs Collector Current
10
100
1000
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current--- IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current---IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=5V
Power Derating Curve
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature --- Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C203S3
Issued Date : 2002.05.11
Revised Date : 2002.11.01
Page No. : 4/4
BTC4097S3
CYStek Product Specification
SOT-323 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A
0.0315
0.0433
0.80
1.10
e1
0.0256 - 0.65 -
A1 0.0000 0.0039 0.00 0.10 He 0.0787 0.0886 2.00 2.25
bp 0.0118 0.0157 0.30 0.40 Lp 0.0059
0.0177 0.15 0.45
C 0.0039
0.0098 0.10 0.25 Q 0.0051 0.0091 0.13 0.23
D 0.0709
0.0866 1.80 2.20 v 0.0079 -
0.2
-
E 0.0453
0.0531 1.15 1.35 w 0.0079 -
0.2
-
e 0.0512 -
1.3
-
- -
10
0
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
He
E
A
A1
Q
Lp
e1
e
bp
1
2
3
D
W
B
v
A
Z
detail Z
A
C
0
1
2
scale
mm
Style: Pin 1.Base 2.Emitter 3.Collector
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Marking:
TE
2X
PDF 
ZIP