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Электронный компонент: BTC4617C3

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CYStech Electronics Corp.

Spec. No. : C204C3
Issued Date : 2004.03.02
Revised Date :
Page No. : 1/4
BTC4617C3
CYStek Product Specification

General Purpose NPN Epitaxial Planar Transistor
BTC4617C3
Description
The BTC4617C3 is designed for use in driver stage of AF amplifier and low speed switching.
Symbol Outline

Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol Limits
Unit
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
7 V
Collector Current
I
C
150 mA
Power Dissipation @Ta=25
Derate above 25
Pd 150 mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
SOT-523
BTC4617C3
BBase
CCollector
EEmitter
B E
C
CYStech Electronics Corp.

Spec. No. : C204C3
Issued Date : 2004.03.02
Revised Date :
Page No. : 2/4
BTC4617C3
CYStek Product Specification

Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
60 - - V
I
C
=50A
BV
CEO
50 - - V
I
C
=1mA
BV
EBO
7 - - V
I
E
=50A
I
CBO
- - 100
nA
V
CB
=60V
I
EBO
- - 100
nA
V
EB
=7V
*V
CE(sat)
- - 0.5 V
I
C
=50mA, I
B
=5mA
h
FE
120 - 560 -
V
CE
=6V, I
C
=1mA
f
T
-
180
-
MHz
V
CE
=12V, I
C
=2mA, f=30MHz
Cob - 2 3.5
pF
V
CB
=12V, I
E
=0A, f=1MHz
*Pulse Test: Pulse Width
380s, Duty Cycle
2%

Marking Code and Classification of h
FE
Rank Q R S
h
FE
Range 120-270 180-390 270-560
Marking BQ
BR
BS















CYStech Electronics Corp.

Spec. No. : C204C3
Issued Date : 2004.03.02
Revised Date :
Page No. : 3/4
BTC4617C3
CYStek Product Specification

Characteristic Curves
Current Gain vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current --- IC(mA)
Current Gain---
HFE
HFE@VCE=6V
Saturation Voltage vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current --- IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current --- IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current --- IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=12V
Power Derating Curve
0
20
40
60
80
100
120
140
160
0
50
100
150
200
Ambient Temperature ---Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.

Spec. No. : C204C3
Issued Date : 2004.03.02
Revised Date :
Page No. : 4/4
BTC4617C3
CYStek Product Specification

SOT-523 Dimension

*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A
0.0079
0.0157
0.20
0.40 I
*0.0197 - *0.50 -
B 0.0591
0.0669 1.50 1.70 J 0.0610 0.0650 1.55 1.65
C 0.0118
0.0197 0.30 0.50 K 0.0276
0.0315 0.70 0.80
D 0.0295
0.0335 0.75 0.85 L 0.0224 0.0248 0.57 0.63
E 0.0118
0.0197 0.30 0.50 M 0.0020
0.0059 0.05 0.15
F 0.0039
0.0118 0.10 0.30 N 0.0039 0.0118 0.10 0.30
G 0.0039
0.0118
0.10 0.30 O 0 0.0031 0 0.08
H
*0.0197 - *0.50 -
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

N
H
F
1
2
3
J
A
B
C
D
E
G
I
K L
M
O
Style: Pin 1.Base 2.Emitter 3.Collector
3-Lead SOT-523 Plastic
Surface Mounted Package
CYStek Package Code: C3
Marking:
3E_
_ : hFE Rank Code
B_