CYStech Electronics Corp.
Spec. No. : C212N3
Issued Date : 2002.05.08
Revised Date :2002.11.01
Page No. : 1/8
BTC5094N3
CYStek Product Specification
High Cutoff Frequency NPN Epitaxial Planar Transistor
BTC5094N3
Description
The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and
CATV band.
Equivalent Circuit
Features
Low Noise and High Gain:
NF=1.4dB, TYP. @ V
CE
=2V, Ic=4.2mA, f=0.9GHz
Ga=12dB, TYP. @ V
CE
=2V, Ic=4.2mA, f=0.9GHz
S
21
=13.5dB @ V
CE
=5V, Ic =4.5mA, f=0.9GHz
Applications
Low noise and high gain amplifiers & Oscillator buffer amplifiers
Cordless Phone : LNA , MIX ,and OSC
Remote Cotroller
Absolute Maximun Ratings
Maximum Ratings (Ta=25
C)
Parameters Symbol
Limits
Unit
Collector-Emitter Breakdown Voltage
V
CEO
10
V
Collector-Base Breakdown Voltage
V
CBO
18
V
Emitter-Base Breakdown Voltage
V
EBO
2.5
V
Collector Current
I
C
20 *1
mA
Collector Power Dissipation
Pd
150
mW
Junction Temperature
T
j
125
C
Storage Temperature
T
stg
-50~125
C
Note: *1 Here we define the point DC current gain drops off.
SOT-23
BTC5094N3
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C212N3
Issued Date : 2002.05.08
Revised Date :2002.11.01
Page No. : 2/8
BTC5094N3
CYStek Product Specification
Electrical Characteristics
Characterization Information (Ta=25
C)
Parameters Conditions
Symbol
Min
Typ.
Max
Unit
Collector Cutoff Current
V
CB
=3V, IE=0
I
CBO
- - 1 uA
Emitter Cutoff Current
V
EB
=1V I
EBO
- - 1 uA
V
CE
=2V, I
C
=1mA h
FE(1)
52 - 270 -
DC Current Gain
V
CE
=6V, I
C
=7mA h
FE(2)
52 - - -
V
CE
=1V, I
C
=10mA -
7.6
-
GHz
Cutoff Frequency
V
CE
=3V, I
C
=12mA
f
T
- 9 -
GHz
V
CE
=2V, I
C
=4.2mA, f =0.9GHz
-
1.4
-
dB
Minimum Noise Figure
V
CE
=5V, I
C
=4.5mA, f =0.9GHz
NF
min
- 1.6 - dB
V
CE
=2V, I
C
=4.2mA, f =0.9GHz
-
12
-
dB
Associated Gain
V
CE
=5V, I
C
=4.5mA, f =0.9GHz
G
A
- 13.5 - dB
V
CE
=2V, I
C
=4.2mA, f =0.9GHz
-
12.8
-
dB
Insertion Gain |S
21
|
2
In 50 Ohm system
V
CE
=5V, I
C
=4.5mA, f =0.9GHz
|S
21
|
2
- 13.5 - dB
Output Capacitance
V
CB
=10V, IE=0, f = 0.9GHz
Cob
-
0.7
1.0
pF
Classification Of hFE(1)
Rank K P Q
Range 52~120 82~180 120~270
S-Parameters
V
C
=2V, I
C
=4.2mA, I
B
=60uA
FREQ. S11
S21
S12
S22
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang
0.3 0.604
-54.55
7.842
133.59
0.067 51.54 0.669 -35.46
0.4 0.524
-68.94
7.093
123.62
0.077 48.20 0.583 -39.37
0.5 0.454
-81.62
6.422
114.96
0.084 46.25 0.518 -41.88
0.6 0.399
-92.38
5.768
107.71
0.090 45.71 0.468 -43.32
0.7 0.355
-102.51
5.226
101.24
0.096 45.45 0.431 -44.21
0.8 0.320
-111.90
4.756
95.56
0.101 45.48 0.400 -44.69
0.9 0.291
-121.04
4.367
90.53
0.107 46.55 0.380 -44.62
1 0.268
-129.71
4.011
85.55
0.113 46.59 0.364 -45.20
1.1 0.249
-138.30
3.717
81.44
0.118 47.32 0.348 -45.38
1.2 0.237
-147.20
3.490
77.18
0.125 48.06 0.339 -45.42
1.3 0.225
-155.29
3.229
73.05
0.131 48.45 0.330 -46.12
1.4 0.221
-163.42
3.049
69.95
0.137 48.55 0.324 -46.58
1.5 0.218
-171.96
2.880
65.80
0.144 49.30 0.318 -47.16
1.6 0.216
-179.45
2.708
62.11
0.151 49.54 0.314 -48.21
1.7 0.220 173.74 2.568 59.78 0.158 49.59 0.309 -48.87
1.8 0.223 166.14 2.465 55.42 0.167 49.92 0.310 -49.95
1.9 0.229
160.61
2.311
52.89
0.173 49.56 0.305 -51.14
CYStech Electronics Corp.
Spec. No. : C212N3
Issued Date : 2002.05.08
Revised Date :2002.11.01
Page No. : 3/8
BTC5094N3
CYStek Product Specification
2
0.239 154.93 2.230 50.57 0.181 49.96 0.305 -52.25
2.1 0.246 149.44 2.159 46.58 0.190 49.43 0.300 -54.01
2.2 0.255 146.00 2.032 44.85 0.198 49.13 0.298 -54.87
2.3 0.266 141.03 2.008 41.73 0.207 48.98 0.298 -56.73
2.4 0.275 137.61 1.914 38.98 0.215 48.15 0.295 -58.27
2.5 0.283 134.78 1.845 36.23 0.225 47.73 0.293 -60.00
2.6 0.296 131.62 1.807 34.63 0.235 47.19 0.293 -61.99
2.7 0.301 128.73 1.734 30.54 0.242 46.23 0.290 -63.35
2.8 0.314 126.55 1.678 29.10 0.252 45.96 0.292 -66.03
VC=5V, IC=4.5mA, IB=60uA
FREQ. S11
S21
S12
S22
(GHz) Mag Ang Mag Ang Mag Ang Mag Ang
0.3 0.601
-50.63
8.306
135.16
0.058 51.44 0.678 -29.88
0.4 0.520
-63.63
7.547
125.50
0.065 48.75 0.602 -32.11
0.5 0.448
-75.05
6.868
116.98 0.072 47.60 0.546 -33.33
0.6 0.391
-84.69
6.188
109.83
0.077 47.52 0.505 -33.75
0.7 0.343
-93.82
5.624
103.45
0.082 47.79 0.475 -33.95
0.8 0.304
-102.33
5.124
97.83
0.087 48.29 0.451 -33.81
0.9 0.271
-110.71
4.716
92.86
0.092 49.77 0.436 -33.39
1 0.244
-118.73
4.336
87.94
0.097 50.18 0.424 -33.71
1.1 0.221
-126.87
4.014
83.94
0.102 51.28 0.412 -33.60
1.2 0.204
-135.86
3.777
79.76
0.108 52.42 0.407 -33.56
1.3 0.188
-144.08
3.486
75.61
0.114 53.16 0.401 -34.10
1.4 0.180
-153.03
3.297
72.75
0.120 53.50 0.398 -34.42
1.5 0.174
-162.61
3.121
68.59
0.126 54.63 0.395 -34.93
1.6 0.168
-171.25
2.930
64.89
0.133 55.21 0.393 -35.76
1.7 0.171
-179.18
2.777
62.84
0.140 55.36 0.390 -36.39
1.8 0.173
171.39
2.676
58.35
0.148 56.18 0.393 -37.29
1.9 0.177
164.95
2.496
55.94
0.155 55.92 0.390 -38.39
2 0.187
158.33
2.413
53.90
0.162 56.69 0.393 -39.34
2.1 0.193
151.69
2.345
49.72
0.171 56.35 0.390 -40.76
2.2 0.202
148.00
2.192
48.29
0.178 56.24 0.389 -41.57
2.3 0.214
142.43
2.181
45.23
0.189 56.43 0.392 -43.10
2.4 0.223
138.68
2.076
42.50
0.196 55.84 0.390 -44.47
2.5 0.230
135.64
1.997
39.66
0.206 55.56 0.390 -46.00
2.6 0.244
132.44
1.961
38.47
0.217 55.08 0.392 -47.69
2.7 0.249
129.17
1.884
33.93
0.224 54.51 0.391 -48.94
2.8 0.262
127.23
1.820
32.88
0.235 54.48 0.395 -51.05
Smoothed noise data (VC=2V, IC=4.2mA, IB=60uA)
FREQ. FMIN GAMMA
OPT
Rn
Ga F50-S F50-M G50
(GHz) (dB) Mag Ang (To
50)
(dB) (dB) (dB) (dB)
0.3 0.80 0.622 13.9 0.45 18.89 1.67 2.33 17.89
0.6 1.01 0.401 29.9 0.35 15.66 1.4 1.74 15.22
CYStech Electronics Corp.
Spec. No. : C212N3
Issued Date : 2002.05.08
Revised Date :2002.11.01
Page No. : 4/8
BTC5094N3
CYStek Product Specification
0.9 1.21 0.282 48.2 0.29 13.05 1.42 2.01 12.80
1.2 1.42 0.239 68.6 0.27 10.97 1.57 1.82 10.86
1.5 1.63 0.246 90.8 0.24 9.34 1.79 1.79 9.19
1.8 1.84 0.276
114.6 0.21 8.08 2.04 2.45 7.84
2.1 2.04 0.303 139.6 0.16 7.10 2.30 1.87 6.69
2.4 2.25 0.301 165.5 0.14 6.33 2.50 2.50 5.64
2.7 2.46 0.242
-167.8
0.17 5.68 2.62 2.71 4.78
2.8 2.53 0.206
-158.8
0.19 5.48 2.65 2.91 4.50
Smoothed noise data (VC=5V, IC=4.5mA, IB=60uA)
FREQ. FMIN GAMMA
OPT
Rn
Ga F50-S F50-M G50
(GHz) (dB) Mag Ang (To
50)
(dB) (dB) (dB) (dB)
0.3 0.87 0.631 12.4 0.49 19.43 1.80 2.40 18.39
0.6 1.08 0.411 26.3 0.38 16.36 1.51 1.84 15.83
0.9 1.28 0.288 42.5 0.32 13.85 1.51 2.38 13.47
1.2 1.49 0.237 61.0 0.29 11.84 1.65 1.88 11.54
1.5 1.70 0.233 81.7 0.27 10.24 1.85 1.88 9.89
1.8 1.91 0.251 104.9 0.23 9.00 2.09 2.50 8.55
2.1 2.12 0.267 130.5 0.19 8.03 2.32 1.81 7.40
2.4 2.33 0.256 158.5 0.16 7.27 2.51 2.61 6.35
2.7 2.54 0.193
-170.9
0.19 6.64 2.64 2.63 5.50
2.8 2.61 0.157
-160.1
0.22 6.45 2.68 2.92 5.20
HSPICE 2G.6 Model
NPN BJT Parameters
IS=1.444E-16 (A)
IKR=10.0E-3
MJE=0.3882
TR=1.0E-9 (Sec)
BF=85.9
ISC=1.21E-16
TF=1.22E-11 (Sec)
CJS=2.43E-13 (F)
NF=1.0 NC=1.01
XTF=1.70
VJS=0.5734
(V)
VAF=45.9 (V)
RB=4.30 (Ohm)
VTF=0.69 (V)
MJS=0.3798
IKF=160.3E-3 (A)
IRB=20.0E-3 (A)
ITF=0.1 (A)
XTB=0.0
ISE=2.0E-18 (A)
RBM=2.78 (Ohm)
PTF=10.0 (deg)
EG=1.11 (eV)
NE=2.0
RE=1.011 (Ohm)
CJC=2.38E-13 (F)
XTI=3.0
BR=18.54
RC=16.69 (Ohm)
VJC=0.7 (V)
FC=0.9
NR=1.01 CJE=6.04E-13
(F)
MJC=0.4474
TNOM=25 (
C)
VAR=6.299 VJE=1.003
(V)
XCJC=0.3
B'-E' DIODE Parameters
IS=1.0E-22 (A)
CJO=1.0E-15 (F)
XTI=3.0
KF=0.0
RS=10.0 (Ohm)
VJ=1.003 (V)
FC=0.9
AF=1.0
N=1.0 M=0.3882
BV=0.0
(V)
TNOM=25 (
C)
TT=0.0 (Sec)
EG=1.11 (eV)
IBV=1.0E-3 (A)
C'-S' DIODE Parameters
IS=1.0E-22 (A)
CJO=1.0E-15 (F)
XTI=3.0
KF=0.0
RS=0.0 (Ohm)
VJ=0.5734 (V)
FC=0.5
AF=1.0
N=1.0 M=0.3798
BV=0.0
(V)
TNOM=27 (
C)
CYStech Electronics Corp.
Spec. No. : C212N3
Issued Date : 2002.05.08
Revised Date :2002.11.01
Page No. : 5/8
BTC5094N3
CYStek Product Specification
TT=0.0 (Sec)
EG=1.11 (eV)
IBV=1.0E-3(A)
Other Parasitic Parameters
R
EX
=0.0 (Ohm)
R
SS
=10.0 (Ohm)
C2=150 (fF)
L1=0.5 (nH)
R
BX
=0.0 (Ohm)
R
SC
=250.0 (Ohm)
C3=80 (fF)
L2=0.5 (nH)
R
CX
=0.0 (Ohm)
C
SP
=20.89 (fF)
Le=0.6 (nH)
L3=0.6 (nH)
R
SX
=5.0 (Ohm)
C
SC
=41.79 (fF)
Lb=0.85 (nH)
R
SP
=450.0 (Ohm)
C1=70 (fF)
Lc=0 (nH)
Transistor Chip Equivalent Circuit
Package Equivalent Circuit
B
B'
R
BX
E
R
sp
R
EX
0.1nH
G-P
R
SS
C
SP
C'
C
S'
R
SC
R
SX
C
SC
Transistor
Chip
Collector
Base
Emitter
C
3
C
1
C2
L
C
L
2
L
e
L
b
L
1
L
3
B
C
E
S
CYStech Electronics Corp.
Spec. No. : C212N3
Issued Date : 2002.05.08
Revised Date :2002.11.01
Page No. : 6/8
BTC5094N3
CYStek Product Specification
Characteristics Curve
Fig.1 Typical Forward Gummel Plot
1.00E-10
1.00E-09
1.00E-08
1.00E-07
1.00E-06
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
1.00E+00
0
0.2
0.4
0.6
0.8
1
1.2
Base-Emitter Bias Voltage (V)
C
o
l
l
ect
o
r
a
n
d B
a
se
C
u
r
r
en
t
s
(
A
)
V
CE
=1V
Fig.2 Typical Forward Current Gain & Collector Current
0
10
20
30
40
50
60
70
80
90
100
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
Collector Current (A)
C
u
rr
e
n
t Ga
i
n
V
CE
=1V
Fig.3 Typical Output Characteristics
0.0E+00
1.0E-03
2.0E-03
3.0E-03
4.0E-03
5.0E-03
0
1
2
3
4
5
Collector Voltage (V)
Col
l
e
c
t
o
r C
u
rren
n
t
(A
)
Ib=10uA
Ib=20uA
Ib=30uA
Ib=40uA
Ib=50uA
Fig.4 Typical fT & Collector Current
0.0E+00
1.0E+09
2.0E+09
3.0E+09
4.0E+09
5.0E+09
6.0E+09
7.0E+09
8.0E+09
9.0E+09
1.0E+10
1.0E-04
1.0E-03
1.0E-02
1.0E-01
Collector Current (A)
C
u
to
ff F
r
e
q
u
e
n
c
y
(Hz
)
Vce = 1V
Vce = 3 V
Fig.5 Typical NFmin & Collector Current
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.1
1
10
100
Collector Current (mA)
NF
m
i
n
(
d
B
)
V
CE
=2V
Fig.6 Typical Associated Gain & Collector Current
0
2
4
6
8
10
12
14
16
18
20
0.1
1
10
100
Collector Current (mA)
A
sso
ci
at
e
d
G
a
i
n
(
d
B
)
V
CE
=2V
CYStech Electronics Corp.
Spec. No. : C212N3
Issued Date : 2002.05.08
Revised Date :2002.11.01
Page No. : 7/8
BTC5094N3
CYStek Product Specification
Fig.7 Capacitance & Reverse-Biased Voltage
0.1
1
0.1
1
10
Reverse Biased Voltage (V)
Ca
p
a
c
i
t
a
n
c
e
(
p
F
)
Cob
CYStech Electronics Corp.
Spec. No. : C212N3
Issued Date : 2002.05.08
Revised Date :2002.11.01
Page No. : 8/8
BTC5094N3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070
0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Base 2.Emitter 3.Collector
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
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