CYStech Electronics Corp.
Spec. No. : C304A3
Issued Date : 2003.07.28
Revised Date :2004.12.23
Page No. : 1/4
BTD1768A3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTD1768A3
Description
The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
Low collector saturation voltage
High breakdown voltage, V
CEO
=80V (min.)
High collector current, I
C(max)
=1A (DC)
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current (DC)
I
C
1
A
Collector Current (Pulse)
I
CP
2
(Note)
A
Power Dissipation
P
D
750
mW
Thermal Resistance, Junction to Ambient
R
JA
167
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : Pulse test, P
W
10ms, Duty 50%.
BTD1768A3
TO-92
BBase
CCollector
EEmitter
E C B
CYStech Electronics Corp.
Spec. No. : C304A3
Issued Date : 2003.07.28
Revised Date :2004.12.23
Page No. : 2/4
BTD1768A3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
100 -
- V I
C
=50A
BV
CEO
80 - - V
I
C
=1mA
BV
EBO
5 - - V
I
E
=50A
I
CBO
- - 1 A
V
CB
=80V, I
E
=0
I
EBO
- - 1 A
V
EB
=4V, I
C
=0
*V
CE(SAT)
- 0.15 0.4 V
I
C
=500mA, I
B
=20mA
*h
FE
120 - 560 -
V
CE
=3V, I
C
=100mA
f
T
-
100
-
MHz
V
CE
=10V, I
C
=50mA, f=100MHz
Cob - 20 - pF
V
CB
=10V, I
E
=0A, f=1MHz
*Pulse Test: Pulse Width
380
s, Duty Cycle
2%
Classification Of h
FE
Rank Q R S
Range 120~270 180~390 270~560
CYStech Electronics Corp.
Spec. No. : C304A3
Issued Date : 2003.07.28
Revised Date :2004.12.23
Page No. : 3/4
BTD1768A3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
Collector Current---IC(mA)
Current Gain---
HFE
HFE@VCE=2V
HFE@VCE=3V
Saturation Voltage vs Collector Current
10
100
1000
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCESAT@IC=20IB
VBESAT@IC=20IB
On Voltage vs Collector Current
100
1000
1
10
100
1000
Collector Current---IC(mA)
On Voltage---(mV)
VBE(on)@VCE=2V
Power Derating Curve
0
100
200
300
400
500
600
700
800
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C304A3
Issued Date : 2003.07.28
Revised Date :2004.12.23
Page No. : 4/4
BTD1768A3
CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142
0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
D1768
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
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