ChipFind - документация

Электронный компонент: BTD1805I3

Скачать:  PDF   ZIP
CYStech Electronics Corp.

Spec. No. : C820I3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 1/ 4
BTD1805I3
CYStek Product Specification


Low Vcesat NPN Epitaxial Planar Transistor
BTD1805I3
Description
The device is manufactured in NPN planar technology by using a "Base Island" layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.


Features
Very low collector-to-emitter saturation voltage
Fast switching speed
High current gain characteristic
Large current capability


Applications
CCFL drivers
Voltage regulators
Relay drivers
High efficiency low voltage switching applications
Symbol Outline



BTD1805I3
BBase
CCollector
EEmitter
TO-251
B C
B C E
CYStech Electronics Corp.

Spec. No. : C820I3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 2/ 4
BTD1805I3
CYStek Product Specification


Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage (I
E
=0) V
CBO
150 V
Collector-Emitter Voltage (I
B
=0) V
CEO
60
V
Emitter-Base Voltage (I
C
=0) V
EBO
7
V
Collector Current (DC)
I
C
5
Collector Current (Pulse)
I
CP
10
(Note 1)
A
Base Current
I
B
2
A
Power Dissipation @ T
A
=25
P
D
1
Power Dissipation @ T
C
=25
P
D
15
W
Thermal Resistance, Junction to Ambient
R
JA
125
C/W
Thermal Resistance, Junction to Case
R
JC
8.33
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : 1. Single Pulse , Pw380s,Duty2%.
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
150 - - V
I
C
=100A, I
E
=0
*BV
CEO
60 - - V
I
C
=1mA, I
B
=0
BV
EBO
7 - - V
I
C
=100A, I
C
=0
I
CBO
- -
0.1
A
V
CB
=80V, I
E
=0
I
EBO
- -
0.1
A
V
EB
=4V, I
C
=0
*V
CE(sat)
1 - - 50 mV
I
C
=100mA, I
B
=5mA
*V
CE(sat)
2 - 200 300 mV
I
C
=2A, I
B
=50mA
*V
CE(sat)
3 - 240 400 mV
I
C
=3A, I
B
=150mA
*V
CE(sat)
4 - - 600 mV
I
C
=5A, I
B
=200mA
*V
BE(sat)
- 0.9 1.2 V
I
C
=2A, I
B
=100mA
*h
FE
1 200 - 400 -
V
CE
=2V, I
C
=100mA
*h
FE
2 85 - - -
V
CE
=2V, I
C
=5A
*h
FE
3 20 - - -
V
CE
=2V, I
C
=10A
f
T
-
150
-
MHz
V
CE
=10V, I
C
=50mA
Cob - 50
-
pF
V
CB
=10V, f=1MHz
t
on
-
50
-
ns
t
stg
-
1.35
-
s
t
f
-
120
-
ns
V
CC
=30V, I
C
=10I
B
1=-10I
B
2=1A,
R
L
=30
*Pulse Test : Pulse Width
380s, Duty Cycle
2%





CYStech Electronics Corp.

Spec. No. : C820I3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 3/ 4
BTD1805I3
CYStek Product Specification


Characteristic Curves
Current Gain vs Collector Current
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
C
u
r
r
e
nt

G
a
i
n-
--
H
F
E
VCE=1V
VCE=2V
Saturation Voltage vs Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
S
a
t
u
ra
t
i
o
n

V
o
l
t
a
g
e
---(mV
)
VCESAT@IC=20IB
VCESAT@IC=40IB
Saturation Voltage vs Collector Current
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
S
a
t
u
ra
t
i
o
n

V
o
l
t
a
g
e
---(mV
)
VBESAT@IC=20IB
On Voltage vs Collector Current
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
O
n

V
o
l
t
a
g
e
---(
m
V
)
VBEON@VCE=1V
Power Derating Curve
0
0.2
0.4
0.6
0.8
1
1.2
0
50
100
150
200
Ambient Temperature---TA()
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
---P
D
(
W
)
Power Derating Curve
0
2
4
6
8
10
12
14
16
0
50
100
150
200
Case Temeprature---TC()
P
o
w
e
r

D
i
s
s
i
p
a
t
i
o
n
---P
D
(
W
)



CYStech Electronics Corp.

Spec. No. : C820I3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 4/ 4
BTD1805I3
CYStek Product Specification


TO-251 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A
0.0177
0.0217
0.45
0.55
G
0.2559 - 6.50 -
B 0.0354
0.0591 0.90 1.50 H
- *0.1811 - *4.60
C
0.0177
0.0236
0.45 0.60 I - 0.0354 - 0.90
D
0.0866
0.0945
2.20 2.40 J - 0.0315 - 0.80
E 0.2520
0.2677 6.40 6.80 K 0.2047
0.2165 5.20 5.50
F
0.2677
0.2835
6.80
7.20
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0


Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A
E
F
G
H
J
I
3
2
1
K
C
D
B
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
Marking:
D1805