CYStech Electronics Corp.
Spec. No. : C855FP
Issued Date : 2004.08.15
Revised Date :
Page No. : 1/4
BTD1857AFP
CYStek Product Specification
Silicon NPN Epitaxial Planar Transistor
BTD1857AFP
Description
High BV
CEO
High current capability
Complementary to BTB1236AFP
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
180 V
Collector-Emitter Voltage
V
CEO
160 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current (DC)
I
C
1.5 A
Collector Current (Pulse)
I
CP
3 A
Power Dissipation @T
A
=25
2 W
Power Dissipation @T
C
=25
P
D
20 W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
BTD1857AFP
TO-220FP
B C E
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C855FP
Issued Date : 2004.08.15
Revised Date :
Page No. : 2/4
BTD1857AFP
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
180 -
- V I
C
=50
A, I
E
=0
BV
CEO
160 -
- V
I
C
=1mA, I
B
=0
BV
EBO
5 - - V
I
E
=50
A, I
C
=0
I
CBO
- - 1 A
V
CB
=160V, I
E
=0
I
EBO
- - 1 A
V
EB
=4V, I
C
=0
*V
CE(sat)
- - 0.6 V
I
C
=1A, I
B
=100mA
*V
BE(on)
- - 1.5 V
V
CE
=5V, I
C
=150mA
h
FE
1 60 - 320 -
V
CE
=5V, I
C
=150mA
h
FE
2
30 - - -
V
CE
=5V, I
C
=500mA
f
T
-
140
-
MHz
V
CE
=5V, I
C
=150mA
Cob - 27 - pF
V
CB
=10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
380s, Duty Cycle
2%
Classification of h
FE
1
Rank P Q R
Range 82~190 120~200
180~320
CYStech Electronics Corp.
Spec. No. : C855FP
Issued Date : 2004.08.15
Revised Date :
Page No. : 3/4
BTD1857AFP
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---HFE
VCE=5V
Tj=25
Tj=75
Tj=125
Saturation Voltage vs Collector Current
10
100
1000
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Tj=25
Tj=75
Tj=125
Saturation Voltage vs Collector Current
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Tj=25
Tj=75
Tj=125
On Voltage vs Collector Current
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
On Voltage---(mV)
VBE(ON)@VCE=5V
Tj=25
Tj=75
Tj=125
Power Derating Curve
0
0.5
1
1.5
2
2.5
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(W)
Power Derating Curve
0
5
10
15
20
25
0
50
100
150
200
Case Temperature---TC()
Power Dissipation---PD(W)
CYStech Electronics Corp.
Spec. No. : C855FP
Issued Date : 2004.08.15
Revised Date :
Page No. : 4/4
BTD1857AFP
CYStek Product Specification
TO-220FP Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.169 0.185 4.300 4.700 D 0.392
0.408
9.960
10.360
A1
0.051 REF
1.300 REF
E
0.583
0.598
14.800 15.200
A2 0.110 0.126 2.800 3.200 e
0.100
TYP
2.540
TYP
A3
0.098
0.114
2.500
2.900
F
0.106 REF
2.700 REF
b 0.020 0.030 0.500 0.750
0.138 REF
3.500 REF
b1 0.043 0.053 1.100 1.350 L 1.102 1.118 28.000
28.400
b2 0.059
0.069
1.500
1.750
L1 0.067 0.075 1.700 1.900
c 0.020 0.030 0.500 0.750 L2 0.075 0.083 1.900 2.100
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Marking:
D1857A
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