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Электронный компонент: BTD2150A3

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CYStech Electronics Corp.

Spec. No. : C848A3
Issued Date : 2005.02.04
Revised Date :2005.06.03
Page No. : 1/5
BTD2150A3
CYStek Product Specification


Low Vcesat NPN Epitaxial Planar Transistor
BTD2150A3
Features
Low V
CE
(sat), typically 0.25V at I
C
/ I
B
= 2A / 100mA
0.1V at I
C
/ I
B
= 1A / 50mA
Excellent current gain characteristics
Complementary to BTB1424A3
Pb-free package
Symbol Outline


Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limit
Unit
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
6
V
I
C
(DC) 3
A
Collector Current
I
C
(Pulse)
7
(Note)
A
Power Dissipation
Pd
750
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : *1. Single Pulse Pw350
s,Duty2%.
TO-92
BTD2150A3
BBase
CCollector
EEmitter
E C B
CYStech Electronics Corp.

Spec. No. : C848A3
Issued Date : 2005.02.04
Revised Date :2005.06.03
Page No. : 2/5
BTD2150A3
CYStek Product Specification


Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
80 - - V
I
C
=50A, I
E
=0
BV
CEO
50 - - V
I
C
=1mA, I
B
=0
BV
EBO
6 - - V
I
E
=50A, I
C
=0
I
CBO
- -
100
nA
V
CB
=60V, I
E
=0
I
EBO
- -
100
nA
V
EB
=5V, I
C
=0
*V
CE(sat)
- 0.1
0.25 V
I
C
=1A, I
B
=50mA
*V
CE(sat)
- 0.25
0.5 V
I
C
=2A, I
B
=100mA
*V
BE(sat)
- - 1.5 V
I
C
=2A, I
B
=200mA
*h
FE
1
180
- - -
V
CE
=2V, I
C
=100mA
*h
FE
2 180 - 820 -
V
CE
=2V, I
C
=500mA
*h
FE
3
150
- - -
V
CE
=2V, I
C
=1A
f
T
-
90
-
MHz
V
CE
=5V, I
C
=100mA, f=100MHz
Cob - 45
-
pF
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
380
s, Duty Cycle
2%
Classification Of h
FE
2
Rank R
S
T
Range 180~290 270~560
390~820


Characteristic Curves
Grounded Emitter Output Characteristics
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0uA
100uA
200uA
300uA
400uA
500uA
Grounded Emitter Output Characteristics
0
100
200
300
400
500
600
700
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0uA
500uA
1mA
1.5mA
2mA
2.5mA
CYStech Electronics Corp.

Spec. No. : C848A3
Issued Date : 2005.02.04
Revised Date :2005.06.03
Page No. : 3/5
BTD2150A3
CYStek Product Specification


Grounded Emitter Output Characteristics
0
500
1000
1500
2000
2500
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0mA
4mA
6mA
8mA
2mA
10mA
Grounded Emitter Output Characteristics
0
500
1000
1500
2000
2500
3000
3500
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector Current---IC(mA)
IB=0mA
5mA
10mA
15mA
20mA
25mA
Current gain vs Collector current
10
100
1000
1
10
100
1000
10000
Collector current---IC(mA)
Current gain---HFE
VCE=5V
VCE=1V
VCE=2V
Saturation voltage vs Collector current
1
10
100
1000
1
10
100
1000
10000
Collector current---IC(mA)
Saturation voltage---(mV)
IC=40IB
IC=20IB
IC=10IB
VCE(sat)
Saturation votlage vs Collector current
100
1000
10000
1
10
100
1000
10000
Collector current---IC(mA)
Saturation
voltage---(mV)
VBE(sat)@IC=10IB
Power Derating Curve
0
100
200
300
400
500
600
700
800
0
50
100
150
200
Ambient Temperature --- Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.

Spec. No. : C848A3
Issued Date : 2005.02.04
Revised Date :2005.06.03
Page No. : 4/5
BTD2150A3
CYStek Product Specification


TO-92 Taping Outline
Millimeters
DIM Item
Min. Max.
A
Component body height
4.33
4.83
D
Tape Feed Diameter
3.80
4.20
D1 Lead
Diameter
0.36
0.53
D2
Component Body Diameter
4.33
4.83
F1,F2
Component Lead Pitch
2.40
2.90
F1,F2 F1-F2
-
0.3
H
Height Of Seating Plane
15.50
16.50
H1
Feed Hole Location
8.50
9.50
H2
Front To Rear Deflection
-
1
H2A
Deflection Left Or Right
-
1
H3 Component
Height
-
27
H4
Feed Hole To Bottom Of Component
-
21
L
Lead Length After Component Removal
-
11
L1
Lead Wire Enclosure
2.50
-
P
Feed Hole Pitch
12.50
12.90
P1
Center Of Seating Plane Location
5.95
6.75
P2
4 Feed Hole Pitch
50.30
51.30
T
Over All Tape Thickness
-
0.55
T1
Total Taped Package Thickness
-
1.42
T2
Carrier Tape Thickness
0.36
0.68
W Tape
Width
17.50
19.00
W1 Adhesive
Tape
Width
5.00
7.00
-
20 pcs Pitch
253
255
H2A
H2A
H2
H2
D2
A
H
W
W1
H3
H4
H1
L1
L
P2
P
P1
F1F2
D1
D
T2
T
T1
CYStech Electronics Corp.

Spec. No. : C848A3
Issued Date : 2005.02.04
Revised Date :2005.06.03
Page No. : 5/5
BTD2150A3
CYStek Product Specification


TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142
0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.


D2150
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3