CYStech Electronics Corp.
Spec. No. : C208A3
Issued Date : 2003.06.06
Revised Date :
Page No. : 1/4
BTN5551A3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTN5551A3
Description
The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.
Features
High collector-emitter breakdown voltage. (BV
CEO
=160V @ I
C
=1mA)
Complement to BTP5401A3
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol Limits
Unit
Collector-Base Voltage
V
CBO
180 V
Collector-Emitter Voltage
V
CEO
160 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
600 mA
Power Dissipation
Pd
625
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
BTN5551A3
TO-92
BBase
CCollector
EEmitter
E B C
CYStech Electronics Corp.
Spec. No. : C208A3
Issued Date : 2003.06.06
Revised Date :
Page No. : 2/4
BTN5551A3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
180 -
- V I
C
=100A
BV
CEO
160 -
- V
I
C
=1mA
BV
EBO
6 - - V
I
E
=10A
I
CBO
- - 50
nA
V
CB
=120V
I
EBO
- - 50
nA
V
EB
=4V
*V
CE(sat)
1 - 0.1 0.15 V
I
C
=10mA, I
B
=1mA
*V
CE(sat)
2 -
- 0.2. V
I
C
=50mA, I
B
=5mA
*V
BE(sat)
1 -
- 1 V
I
C
=10mA, I
B
=1mA
*V
BE(sat)
2 -
- 1 V
I
C
=50mA, I
B
=5mA
*h
FE
1
80 - - -
V
CE
=5V, I
C
=1mA
*h
FE
2
80 - - -
V
CE
=5V, I
C
=10mA
*h
FE
3
30 - - -
V
CE
=5V, I
C
=50mA
*h
FE
4 52 - 390 -
V
CE
=6V, I
C
=2mA
f
T
100 - -
MHz
V
CE
=20V, I
C
=10mA, f=100MHz
Cob - - 6 pF
V
CB
=20V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification Of hFE4
Rank K P Q R
Range 52~120
82~180
120~270
180~390
Characteristic Curves
Current Gain vs Collector Current
100
1000
0.1
1
10
100
Collector Current--- IC(mA)
Current Gain---
HFE
HFE@VCE=6V
Saturation Voltage vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
CYStech Electronics Corp.
Spec. No. : C208A3
Issued Date : 2003.06.06
Revised Date :
Page No. : 3/4
BTN5551A3
CYStek Product Specification
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current ---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current---IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=12V
Power Derating Curve
0
100
200
300
400
500
600
700
0
50
100
150
200
Ambient Temperature --- Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C208A3
Issued Date : 2003.06.06
Revised Date :
Page No. : 4/4
BTN5551A3
CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
N5551
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
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