CYStech Electronics Corp.
Spec. No. : C231A3
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTN6517A3
CYStek Product Specification
High Voltage NPN Epitaxial Planar Transistor
BTN6517A3
Features
High Breakdown Voltage:BVCEO350V
Complementary to BTP6520A3
Symbol
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
350
V
Collector-Emitter Voltage
VCEO
350
V
Emitter-Base Voltage
VEBO
6
V
Collector Current---continuous
IC
500
mA
Power Dissipation @TA=25
Pd 625 mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
BTN6517A3
TO-92
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C231A3
Issued Date : 2003.04.12
Revised Date :
Page No. : 2/4
BTN6517A3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BVCBO 350 -
-
V IC=100A
BVCEO 350 -
-
V IC=1mA
BVEBO 6 -
- V
IE=10A
ICBO - - 50 nA
VCB=250V
IEBO - - 50 nA
VEB=5V
VCE(sat) 1
-
-
0.3
V
IC=10mA, IB=1mA
VCE(sat) 2
-
-
0.35
V
IC=20mA, IB=2mA
*VCE(sat) 3
-
-
0.5
V
IC=30mA, IB=3mA
*VCE(sat) 4
-
-
1.0
V
IC=50mA, IB=5mA
VBE(sat) 1
-
-
0.75
V
IC=10mA, IB=1mA
VBE(sat) 2
-
-
0.85
V
IC=20mA, IB=2mA
*VBE(sat) 3
-
-
0.9
V
IC=30mA, IB=3mA
VBE(on)
-
-
2
V
VCE=10V, IC=100mA
hFE 1
20
-
-
-
VCE=10V, IC=1mA
hFE 2
30 - - -
VCE=10V,IC=10mA
*hFE 3
30 - 200 -
VCE=10V,IC=30mA
*hFE 4
20 - 200 -
VCE=10V,IC=50mA
*hFE
5
15 - - -
VCE=10V,IC=100mA
fT
40
-
200
MHz
VCE=20V, IC=10mA, f=20MHz
Cob - - 6 pF
VCB=20V,
IE=0A,f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
CYStech Electronics Corp.
Spec. No. : C231A3
Issued Date : 2003.04.12
Revised Date :
Page No. : 3/4
BTN6517A3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
1
10
100
1000
1
10
100
1000
Collector Current---IC(mA)
Current Gain---HF
E
V C E = 1 0 V
Saturation Voltage vs Collector Current
10
100
1000
10000
100000
1
10
100
1000
Collector Current---IC(mA)
Ssturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(m
V)
VBE(SAT)@IC=10IB
Power Derating Curve
0
100
200
300
400
500
600
700
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C231A3
Issued Date : 2003.04.12
Revised Date :
Page No. : 4/4
BTN6517A3
CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Base 3.Collector
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
6517
PDF 
ZIP