CYStech Electronics Corp.
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date :
2004.02.26
Page No. : 1/4
BTN8050A3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTN8050A3
Description
The BTN8050A3 is designed for use in output amplifier of portable radios in class B push pull operation.
Features
High collector current , I
C
= 1.5A
Low V
CE(sat)
Complementary to BTP8550A3
.
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
25
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
1.5
A
Base Current
I
B
0.5
A
Power Dissipation
Pd
625
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
BTN8050A3
TO-92
BBase
CCollector
EEmitter
E C B
CYStech Electronics Corp.
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date :
2004.02.26
Page No. : 2/4
BTN8050A3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
40 - - V
I
C
=100A
BV
CEO
25 - - V
I
C
=2mA
BV
EBO
6 - - V
I
E
=100A
I
CBO
- - 100
nA
V
CB
=35V
I
EBO
- - 100
nA
V
EB
=6V
*V
CE(sat)
- - 0.5 V
I
C
=800mA, I
B
=80mA
*V
BE(sat)
- - 1.2 V
I
C
=800mA, I
B
=80mA
*V
BE(on)
- - 1 V
V
CE
=1V, I
C
=10mA
*h
FE
1
45 - - -
V
CE
=1V, I
C
=5mA
*h
FE
2 85 - 500 -
V
CE
=1V, I
C
=100mA
*h
FE
3
40 - - -
V
CE
=1V, I
C
=800mA
f
T
100 - -
MHz
V
CE
=10V, I
C
=50mA, f=100MHz
Cob - - 20
pF
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
380
s, Duty Cycle
2%
Classification Of h
FE
2
Rank
B C D E
Range 85~160 120~200 160~320 250~500
CYStech Electronics Corp.
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date :
2004.02.26
Page No. : 3/4
BTN8050A3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---HFE
VCE = 1V
VCE = 2V
VCE = 5V
Saturation Voltage vs Collector Current
1
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT) @ IC=10IB
VCE(SAT) @ IC=20IB
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
On Voltage vs Collector Current
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
On Voltage---(mV)
VBE(ON) @ VCE=1V
Power Derating Curve
0
100
200
300
400
500
600
700
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C223A3
Issued Date : 2003.07.30
Revised Date :
2004.02.26
Page No. : 4/4
BTN8050A3
CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
8050
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
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