CYStech Electronics Corp.
Spec. No. : C209A3-H
Issued Date : 2003.03.18
Revised Date :
Page No. : 1/4
BTNA42A3
CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTNA42A3
Description
High breakdown voltage. (BV
CEO
=300V)
Low collector output capacitance. (Typ. 3pF at V
CB
=30V)
Ideal for chroma circuit.
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
500
mA
Power Dissipation
Pd
625
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
TO-92
BTNA42A3
BBase
CCollector
EEmitter
CYStech Electronics Corp.
Spec. No. : C209A3-H
Issued Date : 2003.03.18
Revised Date :
Page No. : 2/4
BTNA42A3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BVCBO 300 -
-
V IC=100uA
BVCEO 300 -
-
V IC=1mA
BVEBO 6 -
- V
IE=10uA
ICBO - - 100
nA
VCB=200V
IEBO - - 100
nA
VEB=6V
*VCE(sat) - 0.1 0.5 V IC=20mA,
IB=2mA
*VBE(sat) -
- 0.9 V IC=20mA,
IB=2mA
*hFE1
25 - - -
VCE=10V,
IC=1mA
*hFE2 52 - 270 -
VCE=10V,
IC=10mA
*hFE3
40 - - -
VCE=10V,
IC=30mA
fT
50
100
-
MHz
VCE=20V, IC=10mA, f=100MHz
Cob - 3 - pF
VCB=20V,
IE=0A,f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification Of hFE2
Rank K P Q
Range 52~120 82~180 120~270
CYStech Electronics Corp.
Spec. No. : C209A3-H
Issued Date : 2003.03.18
Revised Date :
Page No. : 3/4
BTNA42A3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current---IC(mA)
Current Gain---HFE
VCE=1V
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current---IC(mA)
Current Gain---HFE
VCE=10V
Saturation Voltage vs Collector Current
0.01
0.1
1
10
0.1
1
10
100
Collector Current---IC(mA)
Saturation Voltage---(V)
VCE(sat)@IC=10IB
Saturation Voltage vs Collector Current
0.01
0.1
1
10
0.1
1
10
100
Collector Current---IC(mA)
Saturation Voltage---(V)
VCE(sat)@IC=20IB
Saturation Voltage vs Collector Current
0.1
1
0
1
10
100
Collector Current---IC(mA)
Saturation Voltage---(V)
VBE(sat)@IC=10IB
Power Derating Curve
0
100
200
300
400
500
600
700
0
50
100
150
Ambient Temperature---Ta( )
Power Dissipation--- PD(mW)
CYStech Electronics Corp.
Spec. No. : C209A3-H
Issued Date : 2003.03.18
Revised Date :
Page No. : 4/4
BTNA42A3
CYStek Product Specification
TO-92 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1704
0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704
0.1902 4.33 4.83 H
-
*
0.1000 -
*
2.54
C 0.5000 - 12.70 -
I
-
*
0.0500 -
*
1.27
D 0.0142
0.0220 0.36 0.56
1
-
*
5
-
*
5
E -
*
0.0500 -
*
1.27
2
-
*
2
-
*
2
F 0.1323
0.1480 3.36 3.76
3
-
*
2
-
*
2
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
C
NA42
Marking:
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Base 3.Collector
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
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