CYStech Electronics Corp.
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 1/6
BTP953L3
CYStek Product Specification
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP953L3
Features
5 Amps continuous current, up to 10 Amps peak current
Very low saturation voltage
Excellent gain characteristics specified up to 10 Amps
Ptot=3Watts
Extremely low equivalent on resistance, R
CE(SAT)
=70m at 4A
Pb-free package
Symbol Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-6
V
Continuous Collector Current
I
C
-5
A
Peak Collector Current
I
CP
-10
A
Base Current
I
B
-1
A
Power Dissipation @T
A
=25
C
Pd
3
(Note)
W
Operating and Storage Temperature Range
Tj ; Tstg
-55 ~ +150
C
Note: The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal
to 4 square inch minimum.
BTP953L3
BBase
CCollector
EEmitter
SOT-223
B
C
C
E
CYStech Electronics Corp.
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 2/6
BTP953L3
CYStek Product Specification
Characteristics
(Ta=25
C, unless otherwise specified)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
-140 -170 -
V I
C
=-100A
BV
CER
-140 -170 -
V I
C
=-1A, R
BE
1k
BV
CEO
-100 -120 -
V I
C
=-10mA
BV
EBO
-6 -8 - V
I
E
=-100A
I
CBO
- - -50
nA
V
CB
=-100V
I
CER
- - -50
nA
V
CE
=-100V, R
BE
1k
I
EBO
- - -10
nA
V
EB
=-5V
*V
CE(sat)
1 - -18 -50 mV
I
C
=-100mA, I
B
=-10mA
*V
CE(sat)
2 - -85 -115 mV
I
C
=-1A, I
B
=-100mA
*V
CE(sat)
3 - -155 -220 mV
I
C
=-2A, I
B
=-200mA
*V
CE(sat)
4 - -280 -420 mV
I
C
=-4A, I
B
=-400mA
*V
BE(sat)
- -990
-1170
mV
I
C
=-4A, I
B
=-400mA
*V
BE(on)
- -910
-1160
mV
V
CE
=-1V, I
C
=-4A
h
FE
1 100 200 - -
V
CE
=-1V, I
C
=-10mA
h
FE
2 100 200 300 - V
CE
=-1V, I
C
=-1A
*h
FE
3 50 90 320 -
V
CE
=-1V, I
C
=-3A
*h
FE
4 30 50 - -
V
CE
=-1V, I
C
=-4A
*h
FE
5 - 15 - -
V
CE
=-1V, I
C
=-10A
f
T
-
125
-
MHz
V
CE
=-10V, I
C
=-100mA, f=50MHz
Cob - 65 - pF
V
CB
=-10V, f=1MHz
ton
110
ns
toff 460 ns
I
C
=-2A, I
B
1=-200mA, I
B
2=200mA,
V
CC
=-10V
*Pulse Test: Pulse Width
380s, Duty Cycle
2%
Ordering Information
Device Package
Shipping
Marking
BTP953L3
SOT-223
(Pb-free)
1000 pcs / Tape & Reel
953
CYStech Electronics Corp.
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 3/6
BTP953L3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---HFE
VCE=1V
VCE=2V
Saturation Voltage vs Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
IC=10IB
VCE(SAT)
IC=20IB
IC=50IB
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT) @ IC=10IB
On Vottage vs Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
On Voltage---(mV)
VBE(ON)@VCE=1V
Power Derating Curve
0
0.5
1
1.5
2
2.5
3
3.5
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(W)
CYStech Electronics Corp.
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 4/6
BTP953L3
CYStek Product Specification
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C657L3
Issued Date : 2005.01.07
Revised Date : 2005.03.04
Page No. : 5/6
BTP953L3
CYStek Product Specification
Carrier Tape Dimension
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