CYStech Electronics Corp.
Spec. No. : C332SN
Issued Date : 2003.04.15
Revised Date :
Page No. : 1/3
CDSS355ASN
CYStek Product Specification
100V/100mA SURFACE MOUNT SWITCHING DIODE
CDSS355A
Features:
Designed for mounting on small surface
High speed switching
High mounting capability, strong surge withstand, high reliability
Mechanical data:
Case: 0805(2012) Standard package, molded plastic
Terminals : Solder plated, solderable per MIL-STD-750, method 2026.
Polarity: Indicated by cathode band
Mounting position: Any
Weight: 4.8mg (approximately)
Absolute Maximum Ratings(Ta=25)
Characteristics Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V
RRM
110 V
Reverse Voltage
V
R
100 V
Average Forward Current @ 8.3ms single half sinewave
superimposed on rated load(JEDEC method)
I
O
100 mA
Peak Forward Surge Current @ single sinewave, 60Hz
I
FSM
1.0 A
Power Dissipation
P
D
300 mW
Junction Temperature
Tj
-55 to +125
C
Storage Temperature Range
Tstg
-55 to +125
C
Electrical Characteristics
( Tj=25
C)
Characteristics
Symbol Min Typ Max Unit
Forward Voltage at I
F
=100mA V
F
- - 1 V
Reverse Leakage Current at V
R
=100V I
R
-
-
100
nA
Diode Capacitance at V
R
= 1V
C
D
- - 3 pF
Reverse Recovery Time From
I
F
=-I
R
=10mA to I
RR
=-1mA, V
R
=6V, R
L
=50
t
rr
-
-
4 ns
CYStech Electronics Corp.
Spec. No. : C332SN
Issued Date : 2003.04.15
Revised Date :
Page No. : 2/3
CDSS355ASN
CYStek Product Specification
Characteristic Curves
Forward Current vs Forward Voltage
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
Forward Voltage---VF(V)
Forward Current---IF(mA)
125
75
25
-25
Reverse Leakage Current vs Temperature
1
10
100
1000
10000
0
10
20
30
40
50
60
70
80
Ambient Temperature---TA()
Reverse Leakage Current---IR(n
A)
125
75
25
Diode Capacitance vs Reverse Voltage
0
1
2
3
4
5
0
2
4
6
8
10
12
14
Reverse Voltage---VR(V)
Diode Capacitance---CD(pF)
f=1MHz
Ta=25
Forward Current vs Ambient Temperature
0
25
50
75
100
125
0
25
50
75
100
125
150
Ambient Temperature---Ta()
Percentage of Peak Aver
age
Forward Current(%)
Mounting on glass epoxy PCBs
CYStech Electronics Corp.
Spec. No. : C332SN
Issued Date : 2003.04.15
Revised Date :
Page No. : 3/3
CDSS355ASN
CYStek Product Specification
0805(2012) Dimension
*:Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.079 0.087 2.00 2.20 C 0.047 0.055 1.20 1.40
B 0.016(typ.) 0.40(typ.) D 0.035 0.043 0.90 1.10
R
0.008(tup.) 0.20(typ.)
Notes :
1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A
B
C
D
R
0805 surface mount package
CYStek package code:SN
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