CYStech Electronics Corp.
Spec. No. : C354N3
Issued Date : 2003.06.25
Revised Date :
Page No. : 1/4
DTC114WN3
CYStek Product Specification
NPN Digital Transistors (Built-in Resistors
)
DTC114WN3
Features
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making device design easy.
Complements the DTA114WN3
Equivalent Circuit Outline
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Supply Voltage
V
CC
50
V
Input Voltage
V
I
-10~+30
V
I
O
100
mA
Output Current
I
O(max.)
100
mA
Power Dissipation
Pd
200
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
SOT-23
DTC114WN3
R1=10k
, R2=4.7 k
IN(B) : Base
OUT(C) : Collector
GND(E) : Emitter
CYStech Electronics Corp.
Spec. No. : C354N3
Issued Date : 2003.06.25
Revised Date :
Page No. : 2/4
DTC114WN3
CYStek Product Specification
Electrical Characteristics
(Ta=25
C)
Parameter Symbol
Min.
Typ.
Max.
Unit Test
Conditions
V
I(off)
- - 0.8 V
V
CC
=5V, I
O
=100A
Input Voltage
V
I(on)
3 - - V
V
O
=0.3V, I
O
=2mA
Output Voltage
V
O(on)
- - 0.3 V
I
O
/I
I
=10mA/0.5mA
Input Current
I
I
-
-
0.88
mA
V
I
=5V
Output Current
I
O(off)
- - 0.5
A
V
CC
=50V, V
I
=0V
DC Current Gain
G
I
24 - - -
V
O
=5V, I
O
=10mA
Input Resistance
R
1
7
10
13
k
-
Resistance Ratio
R
2
/R
1
0.37 0.47 0.57 - -
Transition Frequency
f
T
-
250
-
MHz
V
CE
=10V, I
C
=5mA, f=100MHz *
* Transition frequency of the device
Characteristic Curves
DC Current Gain vs Output Current
10
100
1000
1
10
100
Output Current ---Io(mA)
Current Gain---
HFE
Vo=5V
Output Voltage vs Output Current
10
100
1000
1
10
100
Output Current ---Io(mA)
Output Voltage---Vo(on)(mV)
Io/Ii=20
Input Voltage vs Output Current (ON Characteristics)
1
10
0.1
1
10
100
Output Current --- Io(mA)
Input Voltage --- Vi(on)(V)
Vo=0.3V
Output Current vs Input Voltage (OFF Characteristics)
0.1
1
10
100
0.1
1
10
Input Voltage --- Vi(off)(V)
Output Current --- Io(mA)
Vcc=5V
CYStech Electronics Corp.
Spec. No. : C354N3
Issued Date : 2003.06.25
Revised Date :
Page No. : 3/4
DTC114WN3
CYStek Product Specification
Power Derating Curve
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature ---Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C354N3
Issued Date : 2003.06.25
Revised Date :
Page No. : 4/4
DTC114WN3
CYStek Product Specification
SOT-23 Dimension
*:Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070
0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes :
1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style : Pin 1.Base 2.Emitter 3.Collector
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Marking:
8W
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