1N4148 DO34
SMALL SIGNAL
SWITCHING DIODES
Features
Mechanical Data
Silicon epitaxial planar diode
Fast switching diodes
500mW power dissipation
This diode is also available in the Mini-MELF case with
the type designation LL4148
Case: DO-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
Maximum Ratings And Electrical Characteristics
Electrical characteristics
(Ratings at 25 ambient temperature unless otherwise specified)
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
Value
Units
Average rectified current, Half wave rectification with
Resistive load at T
A
=25 and F50Hz
mA
150
1)
Surge forward current at t<1S and T
J
=25
-65 to +175
Storage temperature range
Reverse Voltage
Volts
75
V
R
I
AV
I
FSM
500
T
STG
Junction temperature
T
J
175
mA
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Peak Reverse Voltage
Volts
100
V
RM
Power dissipation at T
A
=25
mW
500
1)
Ptot
Symbols
Units
Leakage current
at V
R
=20V
at V
R
=75V
at V
R
=20V, T
J
=150
nA
Junction Capacitance at V
R
=V
F
=0V
I
R
I
R
I
R
C
J
Min.
Thermal resistance, junction to Ambient
Typ.
Max.
25
5
50
4
350
1)
K/W
Forward voltage
Volts
1
V
F
R
JA
pF
Reverse Recovery time from I
F
=10mA to I
R
=1mA,
V
R
=6V, R
L
=100
4
ns
trr
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Voltage rise when switching ON tested with 50mA
pulse tp=0.1S, Rise time<30S, fp=5 to 100KHz
Volts
2.5
V
fr
Rectification efficiency at f=100MHz, V
RF
=2V
0.45
Dimensions in inches and (millimeters)
DO-34(GLASS)
1.02(26.0)
MIN.
1.02(26.0)
MIN.
0.106(2.9)
MAX.
0.017(0.42)
MAX.
DIA.
0.79(2.0)
MAX.
DIA.
A
A
FIG.1-FORWARD CHARACTERISTICS
FIG.2-DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG. 4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
T
J
=25
T
J
=100
1
0
2V
I
F
V
F
mA
1
10-1
10-2
102
103
10
I
F
T
J
= 25
f=1KHz
1
10-
1
10-
2
10
2
10
10
3
1
10
2
10
4
10
mA
100
0
200
T
A
P
tot
0
100
300
200
1000
900
800
700
600
500
400
mW
T
J
= 25
f=1MHz
2
0
10V
8
6
4
0.7
0.8
1.0
0.9
1.1
V
R
C
tot
(VR)
C
tot
(OV)
r
F
RATINGS AND CHARACTERISTIC CURVES 1N4148
FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT
CIRCUIT
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
100
0
200
nA
103
1
102
104
10
V
R
= 20V
V
O
5K
2nF
V
RF
=2V
D.U.T.
60
tp
1
10-
1
10-
2
10S
10-3
10-5
10-4
0.1
1
100
10
I
FRM
A
V=tp/T
T=1/fp
tp
I
FRM
T
n=0
0.1
0.5
0.2
RATINGS AND CHARACTERISTIC CURVES 1N4148
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