POWER TRANSISTOR E13002
ELECTRICAL CHARACTERISTICS
Tc=25
o
C unless otherwise specified
FEATURES
NPN SILICON TRANSISTOR
Tc=25
o
C unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=100
A , I
E
=0
I
C
=1mA , I
B
=0
I
E
=100
A , I
C
=0
V
CB
=600V , I
E
=0
V
EB
=6V , I
C
=0
V
CE
=10V , I
C
=100mA
V
CE
=10V , I
C
=200mA
I
C
=200mA , I
B
=40mA
I
C
=200mA , I
B
=40mA
V
CE
=10V , I
C
=100mA
f=1MHz
I
C
=1A , I
B1
=-I
B2
=0.2A ,
V
CC
=100V
V
600
400
100
100
60
0.8
1.1
0.5
2.5
6
8
40
9
6
5
V
V
A
A
V
V
MHz
S
S
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE
=10V , I
C
=10mA
h
FE(3)
V
CEsat
V
BEsat
f
T
t
f
t
s
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Fall time
Storage time
SWITCHING REGULATOR APPLICATION
High speed switching
Suitable for switching regulator
and motor control
Case : TO-126 molded plastic body
Parameter
Symbol
Value
UNIT
Power dissipation
P
CM
W
1.2
1.0
-55
o
C to +150
o
C
A
o
C
I
CM
T
J
, T
STG
Collector current
Operating and storage junction temperature range
TO-126
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 P L
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.065
1.15
1.65
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
1.02
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